HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING NONALLOYED CONTACTS ON N(+)-INP CONTACTING LAYERS/

Authors
FRESINA MT AHMARI DA THOMAS S BARLAGE DW MARTINO CA FENG M STILLMAN GE
Citation
Mt. Fresina et al., HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING NONALLOYED CONTACTS ON N(+)-INP CONTACTING LAYERS/, Journal of electronic materials, 25(10), 1996, pp. 1637-1639
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
10
Year of publication
1996
Pages
1637 - 1639
Database
ISI
SICI code
0361-5235(1996)25:10<1637:HIIHBU>2.0.ZU;2-E
Abstract
We have demonstrated a high-speed InP/InGaAs heterojunction bipolar tr ansistor with nonalloyed TiPtAu contacts on n(+)-InP emitter and colle ctor, contacting layers. The use of SiBr4 as a Silicon doping source e nabled the formation, of low resistance (rho(C) < 2 x 10(-6) a cm(2)), nonalloyed TiPtAu contacts to the heavily doped (n = 2 x 10(19) cm(-3 )) InP contacting layers. A device with a 3 x 10 mu m(2) emitter conta ct exhibited excellent dc characteristics and had f(T) = f(max) = 107 GHz. Emitter and collector resistances are compared to a device with I nGaAs contacting layers.