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Results: 1-25/1514
Authors:
LI G
YUAN S
TAN HH
LIU XQ
CHUA SJ
JAGADISH C
Citation: G. Li et al., IN0.2GA0.8AS GAAS QUANTUM-WELL LASER WITH C-DOPED CLADDING AND OHMIC CONTACT LAYERS/, Journal of electronic materials, 27(9), 1998, pp. 61-63
Authors:
YU GY
FAN XW
ZHANG JY
YANG BJ
SHEN DZ
ZHAO XW
Citation: Gy. Yu et al., THE EXCITON TUNNELING IN ZNCDSE ZNSE ASYMMETRIC DOUBLE-QUANTUM-WELL/, Journal of electronic materials, 27(9), 1998, pp. 1007-1009
Authors:
XU Q
HSU JWP
TING SM
FITZGERALD EA
SIEG RM
RINGEL SA
Citation: Q. Xu et al., SCANNING FORCE MICROSCOPY STUDIES OF GAAS FILMS GROWN ON OFFCUT GE SUBSTRATES, Journal of electronic materials, 27(9), 1998, pp. 1010-1016
Authors:
LEE CT
FU CH
TSAI CD
LIN W
Citation: Ct. Lee et al., PERFORMANCE CHARACTERIZATION OF INGAP SCHOTTKY CONTACT WITH ITO TRANSPARENT ELECTRODES, Journal of electronic materials, 27(9), 1998, pp. 1017-1021
Authors:
KNOLL D
HEINEMANN B
BOLZE D
EHWALD KE
FISCHER G
KRUGER D
MORGENSTERN T
NAUMANN E
SCHLEY P
TILLACK B
WOLANSKY D
Citation: D. Knoll et al., INFLUENCE OF THE OXYGEN-CONTENT IN SIGE ON THE PARAMETERS OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(9), 1998, pp. 1022-1026
Authors:
LIU HL
GEARHART SS
BOOSKE JH
WANG W
Citation: Hl. Liu et al., ULTRA-SHALLOW P+ N JUNCTIONS FORMED BY RECOIL IMPLANTATION/, Journal of electronic materials, 27(9), 1998, pp. 1027-1029
Authors:
WELLMANN PJ
SCHOENFELD WV
GARCIA JM
PETROFF PM
Citation: Pj. Wellmann et al., TUNING OF ELECTRONIC STATES IN SELF-ASSEMBLED INAS QUANTUM DOTS USINGAN ION-IMPLANTATION TECHNIQUE, Journal of electronic materials, 27(9), 1998, pp. 1030-1033
Authors:
POZDEEVFREEMAN Y
GLADKIKH A
KARPOVSKI M
PALEVSKI A
Citation: Y. Pozdeevfreeman et al., EFFECT OF DISSOLVED-OXYGEN ON THERMAL-OXIDATION IN TA2O5 TA SANDWICHES/, Journal of electronic materials, 27(9), 1998, pp. 1034-1037
Authors:
CHARACHE GW
EGLEY JL
DEPOY DM
DANIELSON LR
FREEMAN MJ
DZIENDZIEL RJ
MOYNIHAN JF
BALDASARO PF
CAMPBELL BC
WANG CA
CHOI HK
TURNER GW
WOJTCZUK SJ
COLTER P
SHARPS P
TIMMONS M
FAHEY RE
ZHANG K
Citation: Gw. Charache et al., INFRARED MATERIALS FOR THERMOPHOTOVOLTAIC APPLICATIONS, Journal of electronic materials, 27(9), 1998, pp. 1038-1042
Authors:
KITADA T
SAEKI T
OHASHI M
SHIMOMURA S
ADACHI A
OKAMOTO Y
SANO N
HIYAMIZU S
Citation: T. Kitada et al., SUPER-FLAT INTERFACES IN IN0.53GA0.47AS IN0.52AL0.48AS QUANTUM-WELLS GROWN ON (411)A INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 27(9), 1998, pp. 1043-1046
Authors:
RUJIRAWAT S
SMITH DJ
FAURIE JP
NEU G
NATHAN V
SIVANANTHAN S
Citation: S. Rujirawat et al., MICROSTRUCTURAL AND OPTICAL CHARACTERIZATION OF CDTE(211)B ZNTE/SI(211) GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of electronic materials, 27(9), 1998, pp. 1047-1052
Authors:
TONGJUN Y
MATUO T
SUTO K
NISHIZAWA J
Citation: Y. Tongjun et al., GREEN LIGHT EMISSIONS FROM GAP-ALXGA1-XP DOUBLE HETEROSTRUCTURES, Journal of electronic materials, 27(9), 1998, pp. 1053-1058
Authors:
LU X
IYER SSK
LEE J
DOYLE B
FAN ZN
CHU PK
HU CM
CHEUNG NW
Citation: X. Lu et al., PLASMA IMMERSION ION-IMPLANTATION FOR SOI SYNTHESIS - SIMOX AND ION-CUT, Journal of electronic materials, 27(9), 1998, pp. 1059-1066
Authors:
BOLOGNESI CR
DVORAK MW
CHOW DH
Citation: Cr. Bolognesi et al., GATE METALLURGY EFFECTS IN INAS ALSB HFETS - PRELIMINARY-RESULTS AND DEMONSTRATION OF SURFACE FERMI-LEVEL SHIFTS/, Journal of electronic materials, 27(8), 1998, pp. 54-57
Authors:
DOOLITTLE WA
KANG S
KROPEWNICKI TJ
STOCK S
KOHL PA
BROWN AS
Citation: Wa. Doolittle et al., MBE GROWTH OF HIGH-QUALITY GAN ON LIGAO2, Journal of electronic materials, 27(8), 1998, pp. 58-60
Authors:
KAWAKAMI T
KOIDE Y
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: T. Kawakami et al., ELECTRICAL-PROPERTIES AT P-ZNSE METAL INTERFACES/, Journal of electronic materials, 27(8), 1998, pp. 929-935
Authors:
TANAKA Y
TANABE A
SUZUKI K
MIYATAKE T
HIROSE M
Citation: Y. Tanaka et al., SYNCHROTRON X-RAY-IRRADIATION EFFECTS ON THE DEVICE CHARACTERISTICS AND THE RESISTANCE TO HOT-CARRIER DAMAGE OF MOSFETS WITH 4 NM THICK GATE OXIDES, Journal of electronic materials, 27(8), 1998, pp. 936-940
Authors:
HACKE PL
FAHMY Y
CONRAD H
Citation: Pl. Hacke et al., PHASE COARSENING AND CRACK-GROWTH RATE DURING THERMOMECHANICAL CYCLING OF 63SN37PB SOLDER JOINTS, Journal of electronic materials, 27(8), 1998, pp. 941-947
Authors:
YASUDA K
MORI K
KUBOTA Y
KOJIMA K
INUKAI F
ASAI Y
NIMURA T
Citation: K. Yasuda et al., GROWTH-CHARACTERISTICS OF CDZNTE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLZINC, DIMETHYLCADMIUM, DIETHYLTELLURIDE, AND DIMETHYLTELLURIDE AS PRECURSORS, Journal of electronic materials, 27(8), 1998, pp. 948-953
Authors:
KOPF RF
HAMM RA
RYAN RW
BURM J
TATE A
CHEN YK
GEORGIOU G
LANG DV
REN F
Citation: Rf. Kopf et al., EVALUATION OF ENCAPSULATION AND PASSIVATION OF INGAAS INP DHBT DEVICES FOR LONG-TERM RELIABILITY/, Journal of electronic materials, 27(8), 1998, pp. 954-960
PHASE-EQUILIBRIA, DEFECT CHEMISTRY AND SEMICONDUCTING PROPERTIES OF CDTE(S) - THERMODYNAMIC MODELING
Authors:
CHEN Q
HILLERT M
SUNDMAN B
OATES WA
FRIES SG
SCHMIDFETZER R
Citation: Q. Chen et al., PHASE-EQUILIBRIA, DEFECT CHEMISTRY AND SEMICONDUCTING PROPERTIES OF CDTE(S) - THERMODYNAMIC MODELING, Journal of electronic materials, 27(8), 1998, pp. 961-971
Authors:
JUNG KB
HONG J
CHO H
CHILDRESS JR
PEARTON SJ
JENSON M
HURST AT
Citation: Kb. Jung et al., PLASMA CHEMISTRIES FOR DRY-ETCHING OF NIFE AND NIFECO, Journal of electronic materials, 27(8), 1998, pp. 972-978
Authors:
WATANABE H
MOTOZAWA M
SUTO K
NISHIZAWA J
Citation: H. Watanabe et al., STOICHIOMETRY-DEPENDENT DEEP LEVELS IN UNDOPED P-TYPE AL0.38GA0.62AS GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(8), 1998, pp. 979-984
Authors:
HAN HS
CHUNG HS
JOE YI
PARK SS
JOO GC
HWANG N
SONG MY
Citation: Hs. Han et al., THE APPLICATION OF FLIP-CHIP BONDING INTERCONNECTION TECHNIQUE ON THEMODULE ASSEMBLY OF 10 GBPS LASER-DIODE, Journal of electronic materials, 27(8), 1998, pp. 985-989
Authors:
SCHNEUWLY A
GRONING P
SCHLAPBACH L
JAECKLIN VP
Citation: A. Schneuwly et al., INFLUENCE OF SURFACE CONTAMINATION ON METAL METAL BOND CONTACT QUALITY/, Journal of electronic materials, 27(8), 1998, pp. 990-997