SUPER-FLAT INTERFACES IN IN0.53GA0.47AS IN0.52AL0.48AS QUANTUM-WELLS GROWN ON (411)A INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

Effectively atomically flat interfaces over a macroscopic area (''(411 )A super-flat interfaces'') were successfully achieved in In0.53Ga0.47 As/In0.52Al0.48As quantum wells (QWs) grown on (411)A InP substrates b y molecular beam epitaxy (MBE) at a substrate temperature of 570 degre es C and V/III = 6. Surface morphology of the In0.53Ga0.47As/In0.52Al0 .48As QWs was smooth and featureless, while a rough surface of those s imultaneously grown on a (100) InP substrate was observed. Photolumine scence (PL) linewidths at 4.2 K from the (411)A QWs with well width of 0.6-12 nm were 20-30 % narrower than those grown on a (100) InP subst rate and also they are almost as narrow as each of split PL peaks for those of growth-interrupted QWs on a (100) InP substrate. In the case of the (411)A QWs, only one PL peak with very narrow linewidth was obs erved from each QW over a large distance (7 mm) on a wafer.