TUNING OF ELECTRONIC STATES IN SELF-ASSEMBLED INAS QUANTUM DOTS USINGAN ION-IMPLANTATION TECHNIQUE

Authors
WELLMANN PJ SCHOENFELD WV GARCIA JM PETROFF PM
Citation
Pj. Wellmann et al., TUNING OF ELECTRONIC STATES IN SELF-ASSEMBLED INAS QUANTUM DOTS USINGAN ION-IMPLANTATION TECHNIQUE, Journal of electronic materials, 27(9), 1998, pp. 1030-1033
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
9
Year of publication
1998
Pages
1030 - 1033
Database
ISI
SICI code
0361-5235(1998)27:9<1030:TOESIS>2.0.ZU;2-9
Abstract
We report the tunability of up to 150 meV of the ground state transiti on of self-assembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T = 12K) of the quantu m dot transition remains at 80% of its original value after implantati on with a Mn dose of 1 x 10(13) cm(-2) ions. Strong luminescence still remains at room temperature. At a high implantation dose (1 x 10(15) cm(-2)) and rapid thermal annealing (700 degrees C for 60s) about 25% of the QD luminescence intensity is recovered at T = 12K.