Ct. Lee et al., PERFORMANCE CHARACTERIZATION OF INGAP SCHOTTKY CONTACT WITH ITO TRANSPARENT ELECTRODES, Journal of electronic materials, 27(9), 1998, pp. 1017-1021
We present the Schottky performance of transparent ITO on a wide bandg
ap InGaP semiconductor. For a transparent ITO Schottky electrode on In
GaP, a transmittance of higher than 0.9, and a refractive index of 1.8
8 for a wavelength of 820 nm were obtained. We measured its associated
resistivity as 1.94 x 10(-3) Ohm-cm after annealing at 300 degrees C
for 60 min under oxygen ambience. The effect of the thermal annealing
temperature on the crystallization of ITO was examined by x-ray diffra
ction. As well an associated Schottky barrier height of 0.93 eV and an
ideality factor of 1.07 were found using the Schottky diode configura
tion. The results indicate that ITO is a promising transparent Schottk
y material for electrooptical devices based on InGaP structures.