PLASMA CHEMISTRIES FOR DRY-ETCHING OF NIFE AND NIFECO

Authors
JUNG KB HONG J CHO H CHILDRESS JR PEARTON SJ JENSON M HURST AT
Citation
Kb. Jung et al., PLASMA CHEMISTRIES FOR DRY-ETCHING OF NIFE AND NIFECO, Journal of electronic materials, 27(8), 1998, pp. 972-978
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
27
Issue
8
Year of publication
1998
Pages
972 - 978
Database
ISI
SICI code
0361-5235(1998)27:8<972:PCFDON>2.0.ZU;2-R
Abstract
Plasma chemistries based on chlorine, bromine, or iodine have been inv estigated for inductively coupled plasma etching of NiFe and NiFeCo. T here is clear evidence of a chemically enhanced etch mechanism with bo th Cl-2- and I-2-based mixtures, with no enhancement present for Br, c hemistries. Etch yields are typically low(less than or equal to 0.25), emphasizing the need for high ion fluxes in order to achieve practica l material removal rates.