ULTRA-SHALLOW P+ N JUNCTIONS FORMED BY RECOIL IMPLANTATION/

The concept of recoil implantation is proposed to facilitate fabricati on of ultrashallow p(+)/n junctions. In this method, a thin boron film is first deposited onto the Si wafer surface. Then the boron atoms ar e knocked into the Si substrate by Ge implantation or Ar plasma source ion implantation. Dopant activation and damage removal are achieved v ia rapid thermal annealing. Preliminary results show the realization o f sub-100 nm deep p(+)/n junctions with this technique. Monte Carlo si mulations were performed to predict the recoiled boron profiles, and a gree well with the experimental results.