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Results: 4

Authors: IDRISSIBENZOHRA M AKANI M BENZOHRA M
Citation: M. Idrissibenzohra et al., INFLUENCE OF PROCESSING PARAMETERS ON ELECTRICAL-PROPERTIES OF POLYSILICON MONOSILICON JUNCTIONS/, International journal of electronics, 80(6), 1996, pp. 727-737

Authors: AKANI M FROESE A STAIKOV G LORENZ WJ ROHNER M HOPFENGARTNER R SAEMANNISCHENKO G
Citation: M. Akani et al., LOW-TEMPERATURE BEHAVIOR OF HIGH-T-C SUPERCONDUCTOR SEMICONDUCTOR HETEROJUNCTIONS, Physica. C, Superconductivity, 245(1-2), 1995, pp. 131-138

Authors: AKANI M BENOUIS CE BENZOHRA M
Citation: M. Akani et al., ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY()N-C-SI OBTAINED BY LPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS/, Journal de physique. III, 3(8), 1993, pp. 1675-1687

Authors: AKANI M BENOUIS CE BENZOHRA M
Citation: M. Akani et al., ELECTRICAL CHARACTERIZATION OF INTERFACE P-SI-POLY N-C-SI OBTAINED BYLPCVD DEPOSITION OF HEAVILY IN-SITU BORON-DOPED FILMS (VOL 3, PG 1675, 1993)(), Journal de physique. III, 3(11), 1993, pp. 2163-2163
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