Authors:
IGUAIN JL
MARTIN HO
ALDAO CM
GONG Y
CHEY SJ
WEAVER JH
Citation: Jl. Iguain et al., DIMER CHAIN PATTERNS DURING SUBMONOLAYER GROWTH OF SILICON ON SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3460-3463
Citation: A. Palermo et Cm. Aldao, READSORPTION AND DIFFUSION-LIMITED TPD OF WATER FROM ZEOLITE LINDE 4A, Thermochimica acta, 319(1-2), 1998, pp. 177-184
Citation: Da. Mirabella et al., EXACT ONE-BAND MODEL CALCULATION USING THE TIGHT-BINDING METHOD, International journal of quantum chemistry, 68(4), 1998, pp. 285-291
Citation: Cm. Aldao et Jh. Weaver, SCANNING-TUNNELING-MICROSCOPY OBSERVATIONS AND ANALYSIS OF THERMAL ETCHING OF SI(100) WITH BR AND CL, JPN J A P 1, 36(4B), 1997, pp. 2456-2459
Citation: Ms. Castro et Cm. Aldao, THERMIONIC, TUNNELING, AND POLARIZATION CURRENTS IN ZINC-OXIDE VARISTORS, Journal of the European Ceramic Society, 17(12), 1997, pp. 1533-1537
Citation: Jl. Iguain et al., COMPARATIVE EFFECTS OF ADATOM EVAPORATION AND AD-DIMER DIFFUSION FOR SI ON SI(100)-2X1, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2334-2338
Citation: Fj. Williams et al., REPLY TO COMMENT ON STEP DYNAMICS AND EQUILIBRIUM STRUCTURE OF MONOATOMIC STEPS ON SI(100)-2X1, Physical review. B, Condensed matter, 56(23), 1997, pp. 15471-15473
Citation: Jl. Iguain et al., MORPHOLOGY PHASE-DIAGRAM OF A MODEL FOR DIFFUSION AND GROWTH OF SILICON ON SI(100)-(2X1), Surface science, 374(1-3), 1997, pp. 259-268
Citation: Fj. Williams et al., SURFACE MORPHOLOGIES FOR BR-ETCHED SI(100)-2X1 - KINETICS OF PIT GROWTH AND STEP RETREAT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2519-2523
Citation: Jr. Sanchez et Cm. Aldao, STEP DYNAMICS AND EQUILIBRIUM STRUCTURE OF MONOATOMIC STEPS ON SI(100)-2X1, Physical review. B, Condensed matter, 54(16), 1996, pp. 11058-11061
Citation: Jl. Iguain et al., MODEL FOR DIFFUSION AND GROWTH OF SILICON ON SI(100) WITH INEQUIVALENT SITES IN A SQUARE LATTICE, Physical review. B, Condensed matter, 54(12), 1996, pp. 8751-8755
Citation: Cm. Aldao et al., A STEADY-STATE APPROACH TO DETERMINE DIFFUSION-COEFFICIENTS - THE MIGRATION OF SILICON ON THE SI(100) SURFACE, Surface science, 366(3), 1996, pp. 483-490
Citation: Jr. Sanchez et al., ANALYSIS AND MONTE-CARLO SIMULATIONS OF SPONTANEOUS ETCHING - CL-SI(100)-2X1, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2230-2233
Citation: M. Chander et al., ETCHING OF SI(100)-2X1 WITH CHLORINE - REACTION PATHWAYS, ENERGY ANISOTROPIES, AND ATOMIC-SCALE PHENOMENA, Physical review. B, Condensed matter, 52(11), 1995, pp. 8288-8294
Citation: M. Chander et al., DETERMINATION OF DYNAMIC PARAMETERS CONTROLLING ATOMIC-SCALE ETCHING OF SI(100)-(2X1) BY CHLORINE, Physical review letters, 74(11), 1995, pp. 2014-2017
Citation: Cm. Aldao et al., SURFACE PHOTOVOLTAGES DUE TO PULSED SOURCES - IMPLICATIONS FOR PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 50(23), 1994, pp. 17729-17731