Authors: ALIEU J SOUIFI A BREMOND G BOUILLON P SKOTNICKI T

Citation: J. Alieu et al., ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1675-1678