ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY

In contradiction with researchers who try to incorporate a maximum of Ge in the channel, we will demonstrate, in spite of a low Ge fraction (15% or 30%) and in spite of the competition between Si-cap and Si1-xG ex channels, that we obtain a good trade-off between the gain in drain current, the Si/SiGe interface quality (which is responsible for the mobility reduction by scattering on the interface state and responsibl e for the drain junction leakage current), and process simplicity. In this article, we also discuss the good quality of the Si1-xGex interfa ce obtained using 15% or 30% Ge. We then propose a new method; directl y applicable to the transistor, to study the Si/SiGe interface via adm ittance spectroscopy. (C) 1998 American Vacuum Society.