Authors:
FISCHER S
VOLM D
KOVALEV D
AVERBOUKH B
GRABER A
ALT HC
MEYER BK
Citation: S. Fischer et al., SHALLOW DONORS IN EPITAXIAL GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 192-195
Citation: Hc. Alt et al., SPECTROSCOPIC IDENTIFICATION OF THE SIO2 COMPLEX IN OXYGEN-IMPLANTED GAAS-SI, Physical review letters, 79(6), 1997, pp. 1074-1077
Authors:
CHRISTMANN P
ALT HC
HOFMANN DM
MEYER BK
KREISSL J
SCHWARZ R
BENZ KW
Citation: P. Christmann et al., OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS ON TITANIUM AND VANADIUM IONS IN CDTE, Optical materials, 4(2-3), 1995, pp. 210-213
Authors:
MEYER BK
VOLM D
GRABER A
ALT HC
DETCHPROHM T
AMANO A
AKASAKI I
Citation: Bk. Meyer et al., SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS, Solid state communications, 95(9), 1995, pp. 597-600
Citation: Hc. Alt et B. Dischler, LOCAL MODE SPECTROSCOPY OF THE CARBON ACCEPTOR IN GAAS - NEW EXPERIMENTAL ASPECTS, Applied physics letters, 66(1), 1995, pp. 61-63
Citation: C. Frigeri et al., A STUDY OF DISLOCATIONS, PRECIPITATES, AND DEEP-LEVEL EL2 IN LEC GAASGROWN UNDER GA-RICH CONDITIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 657-663
Citation: Hc. Alt et M. Maier, ASSESSMENT OF THE BORON IMPURITY IN SEMIINSULATING GALLIUM-ARSENIDE BY LOCALIZED VIBRATIONAL-MODE SPECTROSCOPY, Semiconductor science and technology, 6(5), 1991, pp. 343-347
Citation: Hc. Alt, NEGATIVE-U PROPERTIES OF OFF-CENTER SUBSTITUTIONAL OXYGEN IN GALLIUM-ARSENIDE, Semiconductor science and technology, 6(10B), 1991, pp. 121-129