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Results: 1-10 |
Results: 10
SHALLOW DONORS IN EPITAXIAL GAN
Authors: FISCHER S VOLM D KOVALEV D AVERBOUKH B GRABER A ALT HC MEYER BK
Citation: S. Fischer et al., SHALLOW DONORS IN EPITAXIAL GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 192-195
SPECTROSCOPIC IDENTIFICATION OF THE SIO2 COMPLEX IN OXYGEN-IMPLANTED GAAS-SI
Authors: ALT HC MUSSIG H BRUGGER H
Citation: Hc. Alt et al., SPECTROSCOPIC IDENTIFICATION OF THE SIO2 COMPLEX IN OXYGEN-IMPLANTED GAAS-SI, Physical review letters, 79(6), 1997, pp. 1074-1077
OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS ON TITANIUM AND VANADIUM IONS IN CDTE
Authors: CHRISTMANN P ALT HC HOFMANN DM MEYER BK KREISSL J SCHWARZ R BENZ KW
Citation: P. Christmann et al., OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATIONS ON TITANIUM AND VANADIUM IONS IN CDTE, Optical materials, 4(2-3), 1995, pp. 210-213
OPTICAL INVESTIGATIONS OF DEFECTS IN CD1-XZNXTE
Authors: STADLER W HOFMANN DM ALT HC MUSCHIK T MEYER BK
Citation: W. Stadler et al., OPTICAL INVESTIGATIONS OF DEFECTS IN CD1-XZNXTE, Physical review. B, Condensed matter, 51(16), 1995, pp. 10619-10630
SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS
Authors: MEYER BK VOLM D GRABER A ALT HC DETCHPROHM T AMANO A AKASAKI I
Citation: Bk. Meyer et al., SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS, Solid state communications, 95(9), 1995, pp. 597-600
PARAMAGNETIC CHARGE-STATE OF SUBSTITUTIONAL OXYGEN IN GAAS
Authors: LINDE M SPAETH JM ALT HC
Citation: M. Linde et al., PARAMAGNETIC CHARGE-STATE OF SUBSTITUTIONAL OXYGEN IN GAAS, Applied physics letters, 67(5), 1995, pp. 662-664
LOCAL MODE SPECTROSCOPY OF THE CARBON ACCEPTOR IN GAAS - NEW EXPERIMENTAL ASPECTS
Authors: ALT HC DISCHLER B
Citation: Hc. Alt et B. Dischler, LOCAL MODE SPECTROSCOPY OF THE CARBON ACCEPTOR IN GAAS - NEW EXPERIMENTAL ASPECTS, Applied physics letters, 66(1), 1995, pp. 61-63
A STUDY OF DISLOCATIONS, PRECIPITATES, AND DEEP-LEVEL EL2 IN LEC GAASGROWN UNDER GA-RICH CONDITIONS
Authors: FRIGERI C WEYHER JL ALT HC
Citation: C. Frigeri et al., A STUDY OF DISLOCATIONS, PRECIPITATES, AND DEEP-LEVEL EL2 IN LEC GAASGROWN UNDER GA-RICH CONDITIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 657-663
ASSESSMENT OF THE BORON IMPURITY IN SEMIINSULATING GALLIUM-ARSENIDE BY LOCALIZED VIBRATIONAL-MODE SPECTROSCOPY
Authors: ALT HC MAIER M
Citation: Hc. Alt et M. Maier, ASSESSMENT OF THE BORON IMPURITY IN SEMIINSULATING GALLIUM-ARSENIDE BY LOCALIZED VIBRATIONAL-MODE SPECTROSCOPY, Semiconductor science and technology, 6(5), 1991, pp. 343-347
NEGATIVE-U PROPERTIES OF OFF-CENTER SUBSTITUTIONAL OXYGEN IN GALLIUM-ARSENIDE
Authors: ALT HC
Citation: Hc. Alt, NEGATIVE-U PROPERTIES OF OFF-CENTER SUBSTITUTIONAL OXYGEN IN GALLIUM-ARSENIDE, Semiconductor science and technology, 6(10B), 1991, pp. 121-129
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