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Results: 1-11 |
Results: 11
H-TERMINATED SILICON - SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS CORRELATED TO THE SURFACE ELECTRONIC-PROPERTIES
Authors: ANGERMANN H HENRION W REBIEN M FISCHER D ZETTLER JT ROSELER A
Citation: H. Angermann et al., H-TERMINATED SILICON - SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS CORRELATED TO THE SURFACE ELECTRONIC-PROPERTIES, Thin solid films, 313, 1998, pp. 552-556
EVOLUTION OF ELECTRONICALLY ACTIVE DEFECTS DURING THE FORMATION OF SISIO2 INTERFACE MONITORED BY COMBINED SURFACE PHOTOVOLTAGE AND SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS/
Authors: ANGERMANN H HENRION W REBIEN M KLIEFOTH K FISCHER D ZETTLER JT
Citation: H. Angermann et al., EVOLUTION OF ELECTRONICALLY ACTIVE DEFECTS DURING THE FORMATION OF SISIO2 INTERFACE MONITORED BY COMBINED SURFACE PHOTOVOLTAGE AND SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS/, Microelectronic engineering, 36(1-4), 1997, pp. 43-46
CHARACTERIZATION OF CHEMICALLY PREPARED SI-SURFACES BY UV-VIS AND IR SPECTROSCOPIC ELLIPSOMETRY AND SURFACE PHOTOVOLTAGE
Authors: ANGERMANN H HENRION W REBIEN M ZETTLER JT ROSELER A
Citation: H. Angermann et al., CHARACTERIZATION OF CHEMICALLY PREPARED SI-SURFACES BY UV-VIS AND IR SPECTROSCOPIC ELLIPSOMETRY AND SURFACE PHOTOVOLTAGE, Surface science, 388(1-3), 1997, pp. 15-23
PREPARATION OF H-TERMINATED SI SURFACES AND THEIR CHARACTERIZATION BYMEASURING THE SURFACE-STATE DENSITY
Authors: ANGERMANN H KLIEFOTH K FLIETNER H
Citation: H. Angermann et al., PREPARATION OF H-TERMINATED SI SURFACES AND THEIR CHARACTERIZATION BYMEASURING THE SURFACE-STATE DENSITY, Applied surface science, 104, 1996, pp. 107-112
DENSITY-OF-STATES AND RELAXATION SPECTRA OF ETCHED, H-TERMINATED AND NATURALLY OXIDIZED SI-SURFACES AND THE ACCOMPANIED DEFECTS
Authors: FLIETNER H FUSSEL W SINH ND ANGERMANN H
Citation: H. Flietner et al., DENSITY-OF-STATES AND RELAXATION SPECTRA OF ETCHED, H-TERMINATED AND NATURALLY OXIDIZED SI-SURFACES AND THE ACCOMPANIED DEFECTS, Applied surface science, 104, 1996, pp. 342-348
DEFECTS AT THE SI SIO2 INTERFACE - THEIR NATURE AND BEHAVIOR IN TECHNOLOGICAL PROCESSES AND STRESS/
Authors: FUSSEL W SCHMIDT M ANGERMANN H MENDE G FLIETNER H
Citation: W. Fussel et al., DEFECTS AT THE SI SIO2 INTERFACE - THEIR NATURE AND BEHAVIOR IN TECHNOLOGICAL PROCESSES AND STRESS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 177-183
EXPERIMENTAL AND THEORETICAL INVESTIGATIONS OF SUBMERGED FERMENTATIONAND SYNTHESIS OF PECTINOLYTIC ENZYMES BY ASPERGILLUS-NIGER
Authors: SCHMIDT O ANGERMANN H FROMMHOLDTREU I HOPPE K
Citation: O. Schmidt et al., EXPERIMENTAL AND THEORETICAL INVESTIGATIONS OF SUBMERGED FERMENTATIONAND SYNTHESIS OF PECTINOLYTIC ENZYMES BY ASPERGILLUS-NIGER, Applied microbiology and biotechnology, 43(3), 1995, pp. 424-430
DEFECT GENERATION AT SILICON SURFACES DURING ETCHING AND INITIAL-STAGE OF OXIDATION
Authors: ANGERMANN H KLIEFOTH K FUSSEL W FLIETNER H
Citation: H. Angermann et al., DEFECT GENERATION AT SILICON SURFACES DURING ETCHING AND INITIAL-STAGE OF OXIDATION, Microelectronic engineering, 28(1-4), 1995, pp. 51-54
INVESTIGATION OF NATIVE-OXIDE GROWTH ON HF-TREATED SI(111) SURFACES BY MEASURING THE SURFACE-STATE DISTRIBUTION
Authors: ANGERMANN H DITTRICH T FLIETNER H
Citation: H. Angermann et al., INVESTIGATION OF NATIVE-OXIDE GROWTH ON HF-TREATED SI(111) SURFACES BY MEASURING THE SURFACE-STATE DISTRIBUTION, Applied physics. A, Solids and surfaces, 59(2), 1994, pp. 193-197
SURFACE ELECTRONIC-PROPERTIES OF ELECTROLYTICALLY HYDROGEN-TERMINATEDSI(111)
Authors: DITTRICH T ANGERMANN H FLIETNER H BITZER T LEWERENZ HJ
Citation: T. Dittrich et al., SURFACE ELECTRONIC-PROPERTIES OF ELECTROLYTICALLY HYDROGEN-TERMINATEDSI(111), Journal of the Electrochemical Society, 141(12), 1994, pp. 3595-3599
ELECTRONIC-PROPERTIES OF THE HF-PASSIVATED SI(111) SURFACE DURING THEINITIAL OXIDATION IN AIR
Authors: DITTRICH T ANGERMANN H FUSSEL W FLIETNER H
Citation: T. Dittrich et al., ELECTRONIC-PROPERTIES OF THE HF-PASSIVATED SI(111) SURFACE DURING THEINITIAL OXIDATION IN AIR, Physica status solidi. a, Applied research, 140(2), 1993, pp. 463-470
Risultati: 1-11 |