EVOLUTION OF ELECTRONICALLY ACTIVE DEFECTS DURING THE FORMATION OF SISIO2 INTERFACE MONITORED BY COMBINED SURFACE PHOTOVOLTAGE AND SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS/

Authors
ANGERMANN H HENRION W REBIEN M KLIEFOTH K FISCHER D ZETTLER JT
Citation
H. Angermann et al., EVOLUTION OF ELECTRONICALLY ACTIVE DEFECTS DURING THE FORMATION OF SISIO2 INTERFACE MONITORED BY COMBINED SURFACE PHOTOVOLTAGE AND SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS/, Microelectronic engineering, 36(1-4), 1997, pp. 43-46
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
36
Issue
1-4
Year of publication
1997
Pages
43 - 46
Database
ISI
SICI code
0167-9317(1997)36:1-4<43:EOEADD>2.0.ZU;2-F
Abstract
The evolution of dangling bond defects on initially H-terminated Si(11 1) surfaces was correlated to the wet-chemical oxide growth on an atom ic scale. The dangling bond induced distribution of interface states w as monitored by surface photovoltage measurements. Spectroscopic ellip sometry was used for sensing the surface morphology and oxide coverage .