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Results: 1-25/1559
Authors:
HENINI M
Citation: M. Henini, PROCEEDINGS OF THE CONFERENCE ON LOW-DIMENSIONAL STRUCTURES AND DEVICES (LDSD97) HELD IN LISBON, PORTUGAL, 19-21 MAY, 1997, Microelectronic engineering, 43-4, 1998, pp. 1-2
Authors:
OZASA K
AOYAGI Y
Citation: K. Ozasa et Y. Aoyagi, SURFACE-STRUCTURE CHANGE BETWEEN INGAAS DOTS AND INGAASP FLAT SURFACE-INDUCED BY IN-SITU ARSENIC PHOSPHORUS REPLACEMENT/, Microelectronic engineering, 43-4, 1998, pp. 3-10
Authors:
RO JR
KIM SB
LEE EH
PARK SJ
Citation: Jr. Ro et al., FABRICATION OF SELF-ASSEMBLED INGAAS, GAAS, AND INAS QUANTUM DOTS BY CHEMICAL BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 11-18
Authors:
QUIVY AA
LEITE JR
Citation: Aa. Quivy et Jr. Leite, SPATIAL CONFINEMENT OF SELF-ORGANIZED MBE-GROWN INXGA1-XAS QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 19-23
Authors:
HAWKER P
KENT AJ
AKIMOV AV
HENINI M
Citation: P. Hawker et al., PHONON-SCATTERING FROM SELF-ALIGNED INAS QUANTUM DOTS IN GAAS, Microelectronic engineering, 43-4, 1998, pp. 25-29
Authors:
IHM GH
LEE SJ
SIM HS
AHN KH
CHANG KJ
Citation: Gh. Ihm et al., EDGE STATES IN A MAGNETIC QUANTUM-DOT, Microelectronic engineering, 43-4, 1998, pp. 31-36
Authors:
TSATSULNIKOV AF
BELOUSOV MV
BERT NA
EGOROV AY
KOPEV PS
KOVSH AR
KRESTNIKOV IL
LEDENTSOV NN
MAXIMOV MV
SUVOROVA AA
USTINOV VM
VOLOVIK BV
ZHUKOV AE
GRUNDMANN M
BIMBERG D
ALFEROV ZI
Citation: Af. Tsatsulnikov et al., LATERAL ASSOCIATION OF VERTICALLY-COUPLED QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 37-43
Authors:
SANGUINETTI S
FORTINA SC
GRILLI E
GUZZI M
HENINI M
UPWARD MD
MORIARTY P
BETON PH
EAVES L
Citation: S. Sanguinetti et al., NOVEL CHARACTERISTICS OF SELF-ASSEMBLED INAS QUANTUM DOTS GROWN ON (311)A GAAS, Microelectronic engineering, 43-4, 1998, pp. 45-49
Authors:
FERRER JC
PEIRO F
CORNET A
MORANTE JR
UTZMEIER T
ARMELLES G
BRIONES F
Citation: Jc. Ferrer et al., MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 51-57
Authors:
PETITPREZ E
GONZALEZBORRERO PP
LUBYSHEV DI
MAREGA E
BASMAJI P
Citation: E. Petitprez et al., OPTICAL-PROPERTIES OF VERTICALLY STACKED INAS ISLAND LAYERS GROWN ON (311)A B AND (001)GAAS SUBSTRATES/, Microelectronic engineering, 43-4, 1998, pp. 59-65
Authors:
SANGUINETTI S
FORTINA SC
GRILLI E
GUZZI M
HENINI M
EAVES L
Citation: S. Sanguinetti et al., PHOTOLUMINESCENCE OF SELF-ORGANIZED INAS GAAS QUANTAM DOTS GROWN ON (N11)B SURFACES/, Microelectronic engineering, 43-4, 1998, pp. 67-70
Authors:
MAXIMOV MV
LEDENTSOV NN
TSATSULNIKOV AF
USTINOV VM
SAKHAROV AV
VOLOVIK BV
KRESTNIKOV IL
ZHEN Z
BROUNKOV PN
KONNIKOV SG
KOPEV PS
BELOUSOV MV
TURK V
BIMBERG D
Citation: Mv. Maximov et al., OPTICAL STUDIES OF MODULATION-DOPED INAS GAAS QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 71-77
Authors:
PAN D
ZENG YP
KONG MY
Citation: D. Pan et al., NEW METHOD FOR THE GROWTH OF HIGHLY UNIFORM QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 79-83
Authors:
TSATSULNIKOV AF
IVANOV SV
KOPEV PS
KRESTNIKOV IL
KRYGANOVSKII AK
LEDENTSOV NN
MAXIMOV MV
MELTSER BY
NEKLUDOV PV
SUVOROVA AA
TITKOV AN
VOLOVIK BV
GRUNDMANN M
BIMBERG D
ALFEROV ZI
Citation: Af. Tsatsulnikov et al., FORMATION OF INSB QUANTUM DOTS IN A GASB MATRIX USING MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 85-90
Authors:
CUSACK MA
JAROS M
BRIDDON PR
Citation: Ma. Cusack et al., ELECTRONIC-PROPERTIES AND OPTICAL-SPECTRA OF INAS GAAS SELF-ASSEMBLEDQUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 91-98
Authors:
LEE SJ
HWANG I
LEE YS
PARK MJ
IHM G
Citation: Sj. Lee et al., ANISOTROPY EFFECTS ON THE ORBITAL MAGNETISM OF ELECTRONS IN A SPHEROIDAL QUANTUM-DOT, Microelectronic engineering, 43-4, 1998, pp. 99-105
Authors:
KULBACHINSKII VA
KYTIN VG
LUNIN RA
MALKINA IG
ZVONKOV BN
SAFYANOV YN
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 107-111
Authors:
FERNANDEZVELICIA FJ
VELASCO VR
Citation: Fj. Fernandezvelicia et Vr. Velasco, COLLECTIVE MODES IN SEMICONDUCTOR HETEROSTRUCTURES, Microelectronic engineering, 43-4, 1998, pp. 113-116
Authors:
DIEZ E
DOMINGUEZADAME F
SANCHEZ A
Citation: E. Diez et al., DEPHASING EFFECTS INDUCED BY WEAK DISORDER IN SUPERLATTICES, Microelectronic engineering, 43-4, 1998, pp. 117-123
Authors:
SANTOS HA
Citation: Ha. Santos, 2ND-ORDER MESOSCOPIC ELECTRIC SUSCEPTIBILITY IN ALXGA1-XAS GAAS QUANTUM-WELLS/, Microelectronic engineering, 43-4, 1998, pp. 125-130
Authors:
KAWASHIMA K
FUJIWARA K
Citation: K. Kawashima et K. Fujiwara, CONTROLLABILITY OF THE WAVE-FUNCTION LOCALIZATION IN AN ASYMMETRICAL BI-PERIODIC GAAS ALAS SUPERLATTICE/, Microelectronic engineering, 43-4, 1998, pp. 131-137
Authors:
KAWASAKI K
KAWASHIMA K
TAKEUCHI M
FUJIWARA K
Citation: K. Kawasaki et al., BARRIER THICKNESS DEPENDENCE OF PHOTOCURRENT SPECTRAL INTENSITY IN GAAS ALAS SUPERLATTICE P-I-N-DIODES/, Microelectronic engineering, 43-4, 1998, pp. 139-145
Authors:
DELACRUZ RM
KANYINDAMALU C
Citation: Rm. Delacruz et C. Kanyindamalu, SPIN SPLITTING EFFECT ON THE EFFECTIVE-MASS OF GAAS ALXGA1-XAS QUANTUM-WELLS/, Microelectronic engineering, 43-4, 1998, pp. 147-152
Authors:
BONILLA LL
VELASCO CA
KOCHELAP VA
Citation: Ll. Bonilla et al., PATTERN-FORMATION AND STABILITY UNDER BISTABLE ELECTROOPTICAL ABSORPTION IN QUANTUM-WELLS, Microelectronic engineering, 43-4, 1998, pp. 153-163
Authors:
OLAJOS J
NILSSON S
GAIL M
ABSTREITER G
Citation: J. Olajos et al., THE ORIGIN TO VARIOUS PL-BANDS IN SI GE STRAIN-SYMMETRIZED SUPERLATTICES/, Microelectronic engineering, 43-4, 1998, pp. 165-170