LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/

Authors
KULBACHINSKII VA KYTIN VG LUNIN RA MALKINA IG ZVONKOV BN SAFYANOV YN
Citation
Va. Kulbachinskii et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 107-111
Citations number
2
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
107 - 111
Database
ISI
SICI code
0167-9317(1998)43-4:<107:LTOIGS>2.0.ZU;2-4
Abstract
The transport and optical properties of InAs/GaAs structures with quan tum dots have been investigated as a function of InAs content. Photolu minescence (PL) spectra showed polarization of radiation in the plane of the structures. The temperature dependence of the resistance was me asured in the [110] and [-110] directions in the temperature range 4.2 K-300 K and anisotropy of conductivity was found. The Shubnikov de Ha as effect, magnetoresistance rho(B) and the Hall effect have been meas ured in a magnetic field B up to 10 T. (C) 1998 Elsevier Science BN. A U rights reserved.