SPATIAL CONFINEMENT OF SELF-ORGANIZED MBE-GROWN INXGA1-XAS QUANTUM DOTS

Authors
QUIVY AA LEITE JR
Citation
Aa. Quivy et Jr. Leite, SPATIAL CONFINEMENT OF SELF-ORGANIZED MBE-GROWN INXGA1-XAS QUANTUM DOTS, Microelectronic engineering, 43-4, 1998, pp. 19-23
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
19 - 23
Database
ISI
SICI code
0167-9317(1998)43-4:<19:SCOSMI>2.0.ZU;2-Q
Abstract
Several samples with InxGa1-xAs quantum dots have been grown by molecu lar beam epitaxy using the self-organization method. The substrate tem perature was varied from sample to sample and atomic-force-microscopy measurements were carried out to investigate the influence of this par ameter on the morphological characteristics of the dots. We observed t hat, under certain conditions related to the initial cleaning process, the nanostructures could be confined within some regions of the sampl e. 1998 Published by Elsevier Science B.V. All rights reserved.