NOVEL CHARACTERISTICS OF SELF-ASSEMBLED INAS QUANTUM DOTS GROWN ON (311)A GAAS

Morphological analysis of epitaxially grown self-assembled InAs quantu m dots grown on GaAs (311)A substrate shows a markedly anisotropic and faceted shape. The islands, triangular pyramids with an elongated axi s, are preferentially aligned along the [(2) over bar 33] direction. P hotoluminescence emission at IO K is 20% polarised along the same dire ction. Luminescence linewidth is reduced with increasing temperature f rom 85 meV(at 10 K) up to 52 meV (at 100 K) with only minor reduction of the emission intensity. (C) 1998 Elsevier Science B.V. All rights r eserved.