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Results:
1-7
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Results: 7
Authors:
ANTIPOV SA
Citation: Sa. Antipov, ELECTRONIC CONTRIBUTION IN ACTIVATION-ENE RGY OF DISLOCATION-MOTION IN SILICON, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(5), 1997, pp. 950-953
Authors:
ANTIPOV SA
BATARONOV IL
DROZHZHIN AI
ROSCHUPKIN AM
Citation: Sa. Antipov et al., INTERACTION OF DISLOCATIONS WITH POINT-DE FECTS AT LOW-TEMPERATURES IN CRYSTALS WITH HIGH PEIERLS BARRIER, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(9), 1996, pp. 159-162
Authors:
ANTIPOV SA
BATARONOV IL
DROZHZHIN AI
ERMAKOV AP
ROSHCHUPKIN AM
Citation: Sa. Antipov et al., KINETIC FEATURES OF TORSION STRESS-STRAIN CURVES FOR SEMICONDUCTOR WHISKERS, Physica status solidi. a, Applied research, 149(2), 1995, pp. 637-648
Authors:
MIKHAILOV VN
MUROGOV VM
RABOTNOV NS
TROYANOV MF
ILYUNIN VG
KAGRAMANYAN VS
RUDNEVA VY
SOLONIN MI
ZAKHARKIN BS
ANTIPOV SA
MEMSHIKOVA TS
KIRYUSHIN AI
Citation: Vn. Mikhailov et al., PLUTONIUM USE IN NUCLEAR-POWER IN RUSSIA, Atomic energy, 76(4), 1994, pp. 317-322
Authors:
ANTIPOV SA
DROZHZHIN AI
Citation: Sa. Antipov et Ai. Drozhzhin, METHOD FOR DETERMINING THE SENSITIVITY OF UNBONDED SILICON-WHISKER RESISTANCE-STRAIN GAUGES, Industrial laboratory, 60(2), 1994, pp. 129-130
Authors:
ANTIPOV SA
BATARONOV IA
DROZHZHIN AI
ROSHCHUPKIN AM
Citation: Sa. Antipov et al., CHANGE IN THE ELECTRICAL-RESISTANCE OF STRAIN-GAUGES DUE TO BENDING, Semiconductors, 27(6), 1993, pp. 508-511
Authors:
ANTIPOV SA
DROZHZHIN AI
Citation: Sa. Antipov et Ai. Drozhzhin, DISLOCATION SPECTRUM OF INTERNAL-FRICTION AND PLASTICITY IN SILICON WHISKERS AT THE ALTERNATE TORSION, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(11), 1993, pp. 21-25
Risultati:
1-7
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