Authors: ANTYUSHIN VF VLASOV DA ARSENTEV IN

Citation: Vf. Antyushin et al., SURFACE MOBILITY AND DISTRIBUTION OF ELECTRONS IN THE ACCUMULATION LAYER OF GA2SE3 GAAS HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 646-648

Authors: ANTYUSHIN VF VLASOV DA KORDENKO OI

Citation: Vf. Antyushin et al., NONMONOTONOUS POTENTIAL IN SEMICONDUCTOR ACCUMULATION LAYERS, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 8-9, 1997, pp. 1-6