AAAAAA
Results:
1-16
|
Results: 16
Authors:
VONSOVICI A
VESCAN L
APETZ R
KOSTER A
SCHMIDT K
Citation: A. Vonsovici et al., ROOM-TEMPERATURE PHOTOCURRENT SPECTROSCOPY OF SIGE SI P-I-N PHOTODIODES GROWN BY SELECTIVE EPITAXY/, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 538-542
Authors:
HIGGS V
LIGHTOWLERS EC
APETZ R
VESCAN L
Citation: V. Higgs et al., CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/, Semiconductor science and technology, 12(4), 1997, pp. 409-412
Authors:
CHRETIEN O
APETZ R
SOUIFI A
VESCAN L
Citation: O. Chretien et al., SI1-XGEX SI VALENCE-BAND OFFSET DETERMINATION USING CURRENT-VOLTAGE CHARACTERISTICS/, Thin solid films, 294(1-2), 1997, pp. 198-200
Authors:
NEUFELD E
WANG S
APETZ R
BUCHAL C
CARIUS R
WHITE CW
THOMAS DK
Citation: E. Neufeld et al., EFFECT OF ANNEALING AND H-2 PASSIVATION ON THE PHOTOLUMINESCENCE OF SI NANOCRYSTALS IN SIO2, Thin solid films, 294(1-2), 1997, pp. 238-241
Authors:
RENTE C
LAUTER J
ENGELS R
REINARTZ R
APETZ R
LUTH H
Citation: C. Rente et al., FAST X-RAY-DETECTION SYSTEMS BASED ON GAAS DIODES GROWN BY LPE, IEEE transactions on nuclear science, 44(3), 1997, pp. 939-942
Authors:
CHRETIEN O
APETZ R
VESCAN L
Citation: O. Chretien et al., IDENTIFICATION OF DISLOCATIONS IN N-TYPE SI SI0.88GE0.12/SI HETEROSTRUCTURES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Semiconductor science and technology, 11(12), 1996, pp. 1838-1842
Authors:
CHRETIEN O
APETZ R
VESCAN L
SOUIFI A
LUTH H
Citation: O. Chretien et al., CAPTURE, STORAGE, AND EMISSION OF HOLES IN SI SI1-XGEX/SI QWS FOR THEDETERMINATION OF THE VALENCE-BAND OFFSET BY DLTS/, Applied surface science, 102, 1996, pp. 237-241
Authors:
POPESCU C
APETZ R
VESCAN L
Citation: C. Popescu et al., LOCAL ACTIVATION-ENERGY AND SHAPE FACTOR OF CURRENT-VOLTAGE CURVE AS INVESTIGATION TOOLS FOR SEMICONDUCTOR BARRIER STRUCTURES, Journal of applied physics, 80(10), 1996, pp. 5791-5798
Authors:
CHRETIEN O
SOUIFI A
APETZ R
VESCAN L
LUTH H
POPESCU C
Citation: O. Chretien et al., DETERMINATION OF VALENCE-BAND OFFSETS FROM SI SI1-XGEX/SI USING TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS/, Journal of applied physics, 79(5), 1996, pp. 2463-2466
Authors:
VESCAN L
DIEKER C
LOO R
APETZ R
HARTMANN A
WICKENHAUSER S
LUTH H
Citation: L. Vescan et al., PROPERTIES OF SI SI1-XGEX QUANTUM DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/, Materials science and technology, 11(4), 1995, pp. 421-424
Authors:
APETZ R
VESCAN L
HARTMANN A
LOO R
DIEKER C
CARIUS R
LUTH H
Citation: R. Apetz et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SELFORGANISED GROWN SIGEDOTS BURIED IN SI, Materials science and technology, 11(4), 1995, pp. 425-428
Authors:
CHRETIEN O
APETZ R
VESCAN L
SOUIFI A
LUTH H
SCHMALZ K
KOULMANN JJ
Citation: O. Chretien et al., THERMAL HOLE EMISSION FROM SI SI(1-X)GEX/SI QUANTUM-WELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of applied physics, 78(9), 1995, pp. 5439-5447
Authors:
APETZ R
VESCAN L
HARTMANN A
DIEKER C
LUTH H
Citation: R. Apetz et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH, Applied physics letters, 66(4), 1995, pp. 445-447
Authors:
LOO R
VESCAN L
HARTMANN A
APETZ R
ZASTROW U
SCHAPERS T
LEUTHER A
DIEKER C
LUTH H
GARTNER P
STOICA T
Citation: R. Loo et al., MAGNETOTRANSPORT AND PHOTOLUMINESCENCE OF 2-DIMENSIONAL HOLE GASES INSI SI1-XGEX/SI HETEROSTRUCTURES/, Physical review. B, Condensed matter, 50(24), 1994, pp. 18113-18123
Authors:
APETZ R
LOO R
VESCAN L
HARTMANN A
ZASTROW U
LEUTHER A
SCHAPERS T
LUTH H
Citation: R. Apetz et al., PHOTOLUMINESCENCE AND MAGNETOTRANSPORT OF 2-D HOLE GASES IN SI SIGE)SI HETEROSTRUCTURES/, Solid-state electronics, 37(4-6), 1994, pp. 957-959
Authors:
VESCAN L
APETZ R
LUTH H
Citation: L. Vescan et al., DETERMINATION OF THE VALENCE-BAND OFFSET OF SI SI0.7GE0.3/SI QUANTUM-WELLS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of applied physics, 73(11), 1993, pp. 7427-7430
Risultati:
1-16
|