Authors: FENG M SCHERRER DR APOSTOLAKIS PJ KRUSE JW

Citation: M. Feng et al., TEMPERATURE-DEPENDENT STUDY OF THE MICROWAVE PERFORMANCE OF 0.25-MU-MGATE GAAS-MESFETS AND GAAS PSEUDOMORPHIC HEMTS, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 852-860

Authors: FENG M SCHERRER DR APOSTOLAKIS PJ MIDDLETON JR MCPARTLIN MJ LAUTERWASSER BD OLIVER JD

Citation: M. Feng et al., KA-BAND MONOLITHIC LOW-NOISE AMPLIFIER USING DIRECT ION-IMPLANTED GAAS-MESFETS, IEEE microwave and guided wave letters, 5(5), 1995, pp. 156-158

Authors: FENG M SCHERRER D KRUSE J APOSTOLAKIS PJ MIDDLETON JR

Citation: M. Feng et al., TEMPERATURE-DEPENDENCE STUDY OF 2-DIMENSIONAL ELECTRON-GAS EFFECT ON THE NOISE PERFORMANCE OF HIGH-FREQUENCY FIELD-EFFECT TRANSISTORS, IEEE electron device letters, 16(4), 1995, pp. 139-141

Authors: APOSTOLAKIS PJ MIDDLETON JR SCHERRER D FENG M LEPORE AN

Citation: Pj. Apostolakis et al., NOISE PERFORMANCE OF LOW-POWER 0.25 MICRON GATE ION-IMPLANTED D-MODE GAAS-MESFET FOR WIRELESS APPLICATIONS, IEEE electron device letters, 15(7), 1994, pp. 239-241