Authors: ARPS M MARKWITZ A

Citation: M. Arps et A. Markwitz, IMPROVED CURRENT-VOLTAGE CHARACTERISTICS OF DOWNSTREAM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SINX DEPOSITED AT LOW-TEMPERATURE BY USINGHE AS A DILUTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1864-1873

Authors: MARKWITZ A ARPS M BAUMANN H DEMORTIER G KRIMMEL EF BETHGE K

Citation: A. Markwitz et al., STUDY OF ELECTRONIC-PROPERTIES AND DEPTH PROFILES OF BURIED AND NEAR-SURFACE SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 506-514

Authors: MARKWITZ A ARPS M BAUMANN H KRIMMEL EF BETHGE K

Citation: A. Markwitz et al., DEPTH PROFILE ANALYSIS AND STUDY OF THE ELECTRONIC-PROPERTIES OF SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 223-226