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PASQUIER S
MENY C
ASADAUSKAS L
LEOTIN J
ARONZON BA
RYLKOV VV
CONEDERA V
FABRE N
REGOLINI JL
MORIN C
Citation: S. Pasquier et al., PHOTOFIELD INTERFACE IMPURITY SPECTROSCOPY IN BLOCKED IMPURITY BAND SI-B STRUCTURES, Journal of applied physics, 83(8), 1998, pp. 4222-4229
Authors:
BRAZIS R
ASADAUSKAS L
RAGUOTIS R
SIEGRIST MR
Citation: R. Brazis et al., NEGATIVE DYNAMIC MOBILITY OF ELECTRONS IN SILICON IN THE FAR-INFRAREDRANGE, International journal of infrared and millimeter waves, 18(6), 1997, pp. 1217-1222
Authors:
URBAN M
SIEGRIST MR
ASADAUSKAS L
RAGUOTIS R
BRAZIS R
Citation: M. Urban et al., A PRECISE NEW METHOD TO EVALUATE MONTE-CARLO SIMULATIONS OF ELECTRON-TRANSPORT IN SEMICONDUCTORS, Applied physics letters, 69(12), 1996, pp. 1776-1778