Citation: C. Nuhoglu et al., THERMAL-TREATMENT OF THE MIS AND INTIMATE NI N-LEC GAAS SCHOTTKY-BARRIER DIODES/, Applied surface science, 135(1-4), 1998, pp. 350-356
Authors:
NUHOGLU C
DEMIR N
NALBANTOGLU B
KUFREVIOGLU OI
YOGURTCU YK
OZDEMIR H
AYYILDIZ E
Citation: C. Nuhoglu et al., ELECTRON-SPIN-RESONANCE STUDIES ON COBALT CARBONIC ANHYDRASE-SUBSTRATE COMPLEXES, Turkish journal of chemistry, 21(2), 1997, pp. 134-138
Authors:
SAGLAM M
AYYILDIZ E
GUMUS A
TURUT A
EFEOGLU H
TUZEMEN S
Citation: M. Saglam et al., SERIES RESISTANCE CALCULATION FOR THE METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER DIODES, Applied physics A: Materials science & processing, 62(3), 1996, pp. 269-273
Authors:
AYYILDIZ E
TURUT A
EFEOGLU H
TUZEMEN S
SAGLAM M
YOGURTCU YK
Citation: E. Ayyildiz et al., EFFECT OF SERIES RESISTANCE ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY DIODES IN THE PRESENCE OF INTERFACIAL LAYER, Solid-state electronics, 39(1), 1996, pp. 83-87