EFFECT OF SERIES RESISTANCE ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY DIODES IN THE PRESENCE OF INTERFACIAL LAYER

In order to make an accurate determination of Schottky diode parameter s such as the ideality factor, the barrier height and the series resis tance [using forward current-voltage (I-V) characteristics in the pres ence of an interfacial layer], a novel calculation method has been dev eloped by taking into account the applied voltage drop across the inte rfacial layer (V-i). The parameters obtained by accounting for the vol tage drop V,have been compared with those obtained without considering the above voltage drop. To examine the consistency of this approach, the comparison has been made by means of Schottky diodes fabricated on a n-type semiconductor substrate with different bulk thickness. It is shown that the voltage drop across the interfacial layer will increas e the ideality factor and the voltage dependence of the I-V characteri stics. In addition, it is shown that the series resistance value incre ases as the semiconductor bulk thickness has been increased.