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Results: 1-25/1965
Authors:
NARASIMHA S
CROTTY G
ROHATGI A
MEIER DL
Citation: S. Narasimha et al., BACK SURFACE FIELD EFFECTS IN THE 17.3-PERCENT EFFICIENT N-TYPE DENDRITIC WEB SILICON SOLAR-CELLS, Solid-state electronics, 42(9), 1998, pp. 1631-1640
Authors:
CHO DH
RYUM BR
HAN TH
LEE SM
SHIN SC
LEE C
Citation: Dh. Cho et al., A 42-GHZ (F(MAX)) SIGE-BASE HBT USING REDUCED PRESSURE CVD, Solid-state electronics, 42(9), 1998, pp. 1641-1649
Authors:
YANG K
BYEON DS
HAN MK
CHOI YI
Citation: K. Yang et al., OPTIMUM DESIGN OF THE FIELD PLATE IN THE CYLINDRICAL P(- ANALYTICAL APPROACH()N JUNCTION ), Solid-state electronics, 42(9), 1998, pp. 1651-1655
Authors:
ALTUKHOV PD
IVANOV GV
KUZMINOV EG
Citation: Pd. Altukhov et al., A SELFORGANIZED DOUBLE POTENTIAL BARRIER IN TUNNELING LIGHT-EMITTING SILICON MOS STRUCTURES, Solid-state electronics, 42(9), 1998, pp. 1657-1660
Authors:
BOSE C
SARKAR CK
Citation: C. Bose et Ck. Sarkar, PERTURBATION CALCULATION OF DONOR STATES IN A SPHERICAL QUANTUM-DOT, Solid-state electronics, 42(9), 1998, pp. 1661-1663
Authors:
XU JP
LAI PT
HUANG L
LO HB
CHENG YC
Citation: Jp. Xu et al., GREATLY SUPPRESSED STRESS-INDUCED SHIFT OF GIDL IN N2O-BASED N-MOSFETS, Solid-state electronics, 42(9), 1998, pp. 1665-1669
COMPREHENSIVE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED IMPURITY CONCENTRATION PROFILES
Authors:
SUZUKI K
SUDO R
TADA Y
TOMOTANI M
FEUDEL T
FICHTNER W
Citation: K. Suzuki et al., COMPREHENSIVE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED IMPURITY CONCENTRATION PROFILES, Solid-state electronics, 42(9), 1998, pp. 1671-1678
Authors:
SIMOEN E
DECOUTERE S
CLAEYS C
DEFERM L
Citation: E. Simoen et al., A GLOBAL DESCRIPTION OF THE BASE CURRENT 1 F NOISE OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS BEFORE AND AFTER HOT-CARRIER STRESS/, Solid-state electronics, 42(9), 1998, pp. 1679-1687
Authors:
WANG YZ
AWADELKARIM OO
COUILLARD JG
AST DG
Citation: Yz. Wang et al., THE EFFECTS OF SUBSTRATES ON THE CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Solid-state electronics, 42(9), 1998, pp. 1689-1696
Authors:
THAPAR N
BALIGA BJ
Citation: N. Thapar et Bj. Baliga, INFLUENCE OF THE COLLECTOR RESISTANCE ON THE PERFORMANCE OF ACCUMULATION CHANNEL DRIVEN BIPOLAR-TRANSISTOR, Solid-state electronics, 42(9), 1998, pp. 1697-1703
Authors:
CAO XA
CABALLERO JA
JUNG KB
LEE JW
ONISHI S
CHILDRESS JA
PEARTON SJ
Citation: Xa. Cao et al., WET CHEMICAL ETCHING OF NIFE, NIFECO AND NIMNSB FOR MAGNETIC DEVICE FABRICATION, Solid-state electronics, 42(9), 1998, pp. 1705-1710
Authors:
SONG MH
LEE YH
HAHN TS
OH MK
YOON KH
Citation: Mh. Song et al., CHARACTERISTICS OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICE USING LAYERED BATIO3 THIN-FILM STRUCTURES, Solid-state electronics, 42(9), 1998, pp. 1711-1717
Authors:
CHO H
DONOVAN SM
MACKENZIE JD
ABERNATHY CR
PEARTON SJ
HAN J
SHUL RJ
LEE JW
Citation: H. Cho et al., HIGH-RESOLUTION PATTERN TRANSFER IN III-NITRIDES USING BCL3 AR INDUCTIVELY-COUPLED PLASMAS/, Solid-state electronics, 42(9), 1998, pp. 1719-1722
Authors:
DHONDT F
BARRETTE J
ROLLAND PA
Citation: F. Dhondt et al., 3D FINITE-DIFFERENCE ELECTROTHERMAL MODEL FOR MULTIFINGER HBTS WITH THERMAL SHUNT AND EMITTER BALLAST RESISTANCE, Solid-state electronics, 42(9), 1998, pp. 1723-1729
Authors:
PULFREY DL
NENER BD
Citation: Dl. Pulfrey et Bd. Nener, SUGGESTIONS FOR THE DEVELOPMENT OF GAN-BASED PHOTODIODES, Solid-state electronics, 42(9), 1998, pp. 1731-1736
Authors:
CHEREMISIN MV
DYAKONOV MI
SHUR MS
SAMSONIDZE G
Citation: Mv. Cheremisin et al., INFLUENCE OF ELECTRON-SCATTERING ON CURRENT INSTABILITY IN-FIELD EFFECT TRANSISTORS, Solid-state electronics, 42(9), 1998, pp. 1737-1742
Authors:
ORTIZCONDE A
RODRIGUEZ J
SANCHEZ FJG
LIOU JJ
Citation: A. Ortizconde et al., AN IMPROVED DEFINITION FOR MODELING THE THRESHOLD VOLTAGE OF MOSFETS, Solid-state electronics, 42(9), 1998, pp. 1743-1746
Authors:
WALTERS RJ
XAPSOS MA
COTAL HL
MESSENGER SR
SUMMERS GP
SHARPS PR
TIMMONS ML
Citation: Rj. Walters et al., RADIATION RESPONSE AND INJECTION ANNEALING OF P-CELLS(N INGAP SOLAR), Solid-state electronics, 42(9), 1998, pp. 1747-1756
Authors:
ZETTERLING CM
DAHLQUIST F
LUNDBERG N
OSTLING M
ROTTNER K
RAMBERG L
Citation: Cm. Zetterling et al., JUNCTION BARRIER SCHOTTKY DIODES IN 6H SIC, Solid-state electronics, 42(9), 1998, pp. 1757-1759
Authors:
GRIBNIKOV ZS
KOROBOV VA
MITIN VV
Citation: Zs. Gribnikov et al., THE TUNNEL-DIODE AS A THYRISTOR EMITTER, Solid-state electronics, 42(9), 1998, pp. 1761-1763
Authors:
CHEN X
LAVOREL B
BOQUILLON JP
SAINTLOUP R
JANNIN M
Citation: X. Chen et al., OPTICAL-ROTARY POWER AT THE RESONANCE OF THE TERBIUM F-7(6)-]D-5(4) LINE IN TERBIUM GALLIUM GARNET, Solid-state electronics, 42(9), 1998, pp. 1765-1766
Authors:
ANDO T
ARAKAWA Y
Citation: T. Ando et Y. Arakawa, INTERNATIONAL WORKSHOP ON NANO PHYSICS AND ELECTRONICS NPE-97 - ROPPONGI-CAMPUS, UNIVERSITY-OF-TOKYO 18-20 SEPTEMBER, 1997 - FOREWORD, Solid-state electronics, 42(7-8), 1998, pp. 1059-1059
Authors:
TUCKER JR
SHEN TC
Citation: Jr. Tucker et Tc. Shen, PROSPECTS FOR ATOMICALLY ORDERED DEVICE STRUCTURES BASED ON STM LITHOGRAPHY, Solid-state electronics, 42(7-8), 1998, pp. 1061-1067
Authors:
SASA S
IKEDA T
KAJIUCHI A
INOUE M
Citation: S. Sasa et al., AFM FABRICATION AND CHARACTERIZATION OF INAS ALGASB NANOSTRUCTURES/, Solid-state electronics, 42(7-8), 1998, pp. 1069-1073
Authors:
FUKUTOME H
TAKANO K
HASEGAWA S
NAKASHIMA H
AOYAMA T
ARIMOTO H
Citation: H. Fukutome et al., DIRECT IMAGING OF NANO PN JUNCTIONS AND THEIR BULK ELECTRONIC-PROPERTIES WITH THE USE OF SCANNING-TUNNELING-MICROSCOPY, Solid-state electronics, 42(7-8), 1998, pp. 1075-1078