A SELFORGANIZED DOUBLE POTENTIAL BARRIER IN TUNNELING LIGHT-EMITTING SILICON MOS STRUCTURES

A recombination radiation line (S-line) of surface 2D electrons and 2D nonequilibrium holes is observed in electroluminescence spectra of tu nneling [100] silicon MOS diodes under tunneling injection of holes in to a selforganized hole quantum well. The hole quantum well in presenc e of an electrical field in the substrate forms an additional potentia l barrier. The transparency of a double barrier, including the oxide b arrier and the additional barrier, can be modulated by the electrical field in the substrate. A possibility of realization of a tunneling ba llistic transistor by use of this modulation is discussed. The transis tor may serve as a fast and effective light source. (C) 1998 Elsevier Science Ltd. All rights reserved.