SUGGESTIONS FOR THE DEVELOPMENT OF GAN-BASED PHOTODIODES

Authors
PULFREY DL NENER BD
Citation
Dl. Pulfrey et Bd. Nener, SUGGESTIONS FOR THE DEVELOPMENT OF GAN-BASED PHOTODIODES, Solid-state electronics, 42(9), 1998, pp. 1731-1736
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
9
Year of publication
1998
Pages
1731 - 1736
Database
ISI
SICI code
0038-1101(1998)42:9<1731:SFTDOG>2.0.ZU;2-I
Abstract
A simple, analytical model is used to investigate the steady-state res ponsivity of GaN-based, p-i-n photodiodes. The trends exhibited by rec ent experimental data are reproduced and, in so doing, deficiencies in present GaN material, and inadequacies in electrical- and optical-par ameter specification, are identified. The model is used to suggest tha t heterojunction diodes, fabricated from materials in the AlxGa1-xN te rnary system, could produce practically important, specialized, UV pho todetectors. (C) 1998 Elsevier Science Ltd. All rights reserved.