JUNCTION BARRIER SCHOTTKY DIODES IN 6H SIC

Junction barrier Schottky (JBS) diodes in 6H SIC have been fabricated and characterised electrically. This device, demonstrated in silicon t echnology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attracti ve for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up t o 1100 V with a leakage current density of 0.15 A cm(-2), limited by t he leakage when the drift region was fully depleted, or breakdown of t he SiC material itself. The forward conduction was limited by an on-re sistance of 20 m Omega cm(2), resulting in forward voltage drops of 2. 6 V at 100 A cm(-2). (C) 1998 Published by Elsevier Science Ltd. All r ights reserved.