COMPREHENSIVE ANALYTICAL EXPRESSION FOR DOSE-DEPENDENT ION-IMPLANTED IMPURITY CONCENTRATION PROFILES

We propose an analytical expression for dose dependent ion-implanted i mpurity concentration profiles using a main function and a tail functi on. The main function describes the profile near the peak region and t he tail function describes the channeling tail profile. The tail funct ion can express various tail lengths with various shapes. We first use a Pearson IV function as the main function, and show that it covers B , BF2, P, AsIn, and Sb ion-implanted impurity concentration profiles i n the energy range of 10 to 180 keV and in the full dose range. We als o demonstrate that some of the ion-implanted impurity concentration pr ofiles can be expressed with a simpler main function: a Gaussian and a joined half Gaussian function. (C) 1998 Elsevier Science Ltd. All rig hts reserved.