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Results: 1-11 |
Results: 11
An atomic program for energy levels of equivalent electrons: lanthanides and actinides
Authors: Edvardsson, S Aberg, D
Citation: S. Edvardsson et D. Aberg, An atomic program for energy levels of equivalent electrons: lanthanides and actinides, COMP PHYS C, 133(2-3), 2001, pp. 396-406
Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers
Authors: Aberg, D Hallen, A Pellegrino, P Svensson, BG
Citation: D. Aberg et al., Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers, APPL PHYS L, 78(19), 2001, pp. 2908-2910
The energy matrix using determinantal product states applied to Ho : YAG
Authors: Edvardsson, S Aberg, D
Citation: S. Edvardsson et D. Aberg, The energy matrix using determinantal product states applied to Ho : YAG, J ALLOY COM, 303, 2000, pp. 280-284
The crystal dependent open-shell polarizability of F-elements: higher order contributions
Authors: Aberg, D Edvardsson, S
Citation: D. Aberg et S. Edvardsson, The crystal dependent open-shell polarizability of F-elements: higher order contributions, J ALLOY COM, 303, 2000, pp. 345-348
The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation
Authors: Schmidt, DC Aberg, D Svensson, BG Lindstrom, JL Barbot, JF Blanchard, C
Citation: Dc. Schmidt et al., The evolution of interstitial-type defects in silicon during platinum diffusion from 400 to 600 degrees C following 2-MeV electron irradiation, MAT SCI E B, 68(2), 1999, pp. 67-71
Ion implantation induced defects in epitaxial 4H-SiC
Authors: Hallen, A Henry, A Pellegrino, E Svensson, BG Aberg, D
Citation: A. Hallen et al., Ion implantation induced defects in epitaxial 4H-SiC, MAT SCI E B, 61-2, 1999, pp. 378-381
Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy
Authors: Aberg, D Hallen, A Svensson, BG
Citation: D. Aberg et al., Low-dose ion implanted epitaxial 4H-SiC investigated by deep level transient spectroscopy, PHYSICA B, 274, 1999, pp. 672-676
Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen
Authors: Aberg, D Linnarsson, MK Svensson, BG Hallberg, T Lindstrom, JL
Citation: D. Aberg et al., Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen, J APPL PHYS, 85(12), 1999, pp. 8054-8059
Ultra-shallow thermal donor formation in oxygen-containing ambient
Authors: Aberg, D Hallberg, T Svensson, BG Lindstrom, JL Linnarsson, MK
Citation: D. Aberg et al., Ultra-shallow thermal donor formation in oxygen-containing ambient, PHYS ST S-B, 210(2), 1998, pp. 527-532
Shallow donors in silicon crystallized from amorphous phase via a silicidemediated epitaxy
Authors: Kuznetsov, AY Aberg, D Svensson, BG
Citation: Ay. Kuznetsov et al., Shallow donors in silicon crystallized from amorphous phase via a silicidemediated epitaxy, PHYS ST S-B, 210(2), 1998, pp. 563-568
Kinetic study of oxygen dimer and thermal donor formation in silicon
Authors: Aberg, D Svensson, BG Hallberg, T Lindstrom, JL
Citation: D. Aberg et al., Kinetic study of oxygen dimer and thermal donor formation in silicon, PHYS REV B, 58(19), 1998, pp. 12944-12951
Risultati: 1-11 |