Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Abrosimov, NV Schroder, W

Citation: Yv. Pomozov et al., Origin of an absorption band peaked at 5560 cm(-1) and related to divacancies in Si1-xGex, SEMICONDUCT, 35(8), 2001, pp. 890-894

Authors: Pomozov, YV Sosnin, MG Khirunenko, LI Yashnik, VI Abrosimov, NV Schroder, W Hohne, M

Citation: Yv. Pomozov et al., Oxygen-containing radiation defects in Si1-xGex, SEMICONDUCT, 34(9), 2000, pp. 989-993

Authors: Veldkamp, M Erko, A Gudat, W Abrosimov, NV Alex, V Khasanov, S Shekhtman, V Neissendorfer, F Pietsch, U

Citation: M. Veldkamp et al., Si1-xGex laterally graded crystals as monochromators for x-ray absorption spectroscopy studies, JPN J A P 1, 38, 1999, pp. 612-615

Authors: Khirunenko, LI Pomozov, YV Sosnin, MG Abrosimov, NV Hohne, M Shroder, W

Citation: Li. Khirunenko et al., Oxygen and peculiarities of its precipitation in Si1-xGex, PHYSICA B, 274, 1999, pp. 305-307

Authors: Yugova, TG Vdovin, VI Mil'vidskii, MG Orlov, LK Tolomasov, VA Potapov, AV Abrosimov, NV

Citation: Tg. Yugova et al., Dislocation pattern formation in epitaxial structures based on SiGe alloys, THIN SOL FI, 336(1-2), 1998, pp. 112-115