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Results: 1-7 |
Results: 7
Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen
Authors: Misiuk, A Bak-Misiuk, J Antonova, IV Raineri, V Romano-Rodriguez, A Bachrouri, A Surma, HB Ratajczak, J Katcki, J Adamczewska, J Neustroev, EP
Citation: A. Misiuk et al., Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen, COMP MAT SC, 21(4), 2001, pp. 515-525
Structural changes induced by fast nitrogen ions in GaAs single crystals
Authors: Zymierska, D Auleytner, J Choinski, J Perchuc, L Godwod, K Domagala, J Adamczewska, J Paszkowicz, W Reginski, K
Citation: D. Zymierska et al., Structural changes induced by fast nitrogen ions in GaAs single crystals, J ALLOY COM, 328(1-2), 2001, pp. 112-118
Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates
Authors: Bak-Misiuk, J Dynowska, E Misiuk, A Calamiotou, M Kozanecki, A Domagala, J Kuristyn, D Glukhanyuk, W Georgakilas, A Trela, J Adamczewska, J
Citation: J. Bak-misiuk et al., Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates, CRYST RES T, 36(8-10), 2001, pp. 997-1003
Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures
Authors: Papis, E Piotrowska, A Kaminska, E Golaszewska, K Jung, W Katcki, J Kudla, A Piskorski, M Piotrowski, TT Adamczewska, J
Citation: E. Papis et al., Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures, VACUUM, 57(2), 2000, pp. 171-178
Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layers
Authors: Bak-Misiuk, J Adamczewska, J Domagala, J Zytkiewicz, ZR Trela, J Misiuk, A Leszczynski, M Jun, J Surma, HB Wnuk, A
Citation: J. Bak-misiuk et al., Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layers, J ALLOY COM, 286(1-2), 1999, pp. 279-283
Formation of dislocations in InGaAs/GaAs heterostructures
Authors: Katcki, J Ratajczak, J Adamczewska, J Phillipp, F Jin-Phillipp, NY Reginski, K Bugajski, M
Citation: J. Katcki et al., Formation of dislocations in InGaAs/GaAs heterostructures, PHYS ST S-A, 171(1), 1999, pp. 275-282
Anisotropic misfit strain relaxation in thin epitaxial layers
Authors: Domagala, J Bak-Misiuk, J Adamczewska, J Zytkiewicz, ZR Dynowska, E Trela, J Dobosz, D Janik, E Leszczynski, M
Citation: J. Domagala et al., Anisotropic misfit strain relaxation in thin epitaxial layers, PHYS ST S-A, 171(1), 1999, pp. 289-294
Risultati: 1-7 |