ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes

Authors: Zhang, RP Adivarahan, V Wang, HM Fareed, Q Kuokstis, E Chitnis, A Shatalov, M Yang, JW Simin, G Khan, MA Shur, M Gaska, R

Citation: Rp. Zhang et al., Quaternary AlInGaN multiple quantum wells for ultraviolet light emitting diodes, JPN J A P 2, 40(9AB), 2001, pp. L921-L924

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

Authors: Rumyantsev, SL Pala, N Shur, MS Gaska, R Levinshtein, ME Adivarahan, V Yang, J Simin, G Asif Khan, M

Citation: Sl. Rumyantsev et al., Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors, APPL PHYS L, 79(6), 2001, pp. 866-868

Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors

Authors: Adivarahan, V Simin, G Tamulaitis, G Srinivasan, R Yang, J Khan, MA Shur, MS Gaska, R

Citation: V. Adivarahan et al., Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors, APPL PHYS L, 79(12), 2001, pp. 1903-1905

Band-edge luminescence in quaternary AllnGaN light-emitting diodes

Authors: Shatalov, M Chitnis, A Adivarahan, V Lunev, A Zhang, J Yang, JW Fareed, Q Simin, G Zakheim, A Khan, MA Gaska, R Shur, MS

Citation: M. Shatalov et al., Band-edge luminescence in quaternary AllnGaN light-emitting diodes, APPL PHYS L, 78(6), 2001, pp. 817-819

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaNfor high-current devices

Authors: Adivarahan, V Lunev, A Khan, MA Yang, J Simin, G Shur, MS Gaska, R

Citation: V. Adivarahan et al., Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaNfor high-current devices, APPL PHYS L, 78(18), 2001, pp. 2781-2783

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Authors: Adivarahan, V Simin, G Yang, JW Lunev, A Khan, MA Pala, N Shur, M Gaska, R

Citation: V. Adivarahan et al., SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors, APPL PHYS L, 77(6), 2000, pp. 863-865

High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells

Authors: Chitnis, A Kumar, A Shatalov, M Adivarahan, V Lunev, A Yang, JW Simin, G Khan, MA Gaska, R Shur, M

Citation: A. Chitnis et al., High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells, APPL PHYS L, 77(23), 2000, pp. 3800-3802

Vertically faceted lateral overgrowth of GaN on SiC with conducting bufferlayers using pulsed metalorganic chemical vapor deposition

Authors: Fareed, RSQ Yang, JW Zhang, JP Adivarahan, V Chaturvedi, V Khan, MA

Citation: Rsq. Fareed et al., Vertically faceted lateral overgrowth of GaN on SiC with conducting bufferlayers using pulsed metalorganic chemical vapor deposition, APPL PHYS L, 77(15), 2000, pp. 2343-2345

Low-frequency noise in n-GaN with high electron mobility

Authors: Levinshtein, ME Rumyantsev, SL Look, DC Molnar, RJ Khan, MA Simin, G Adivarahan, V Shur, MS

Citation: Me. Levinshtein et al., Low-frequency noise in n-GaN with high electron mobility, J APPL PHYS, 86(9), 1999, pp. 5075-5078

Risultati: 1-9 |