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Results:
1-8
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Results: 8
Balancing of the single-layer second-order high-T-c SQUID gradiometer
Authors:
Hwang, YS Ahn, JR Lee, SG Kim, JT Kim, IS Park, YK
Citation:
Ys. Hwang et al., Balancing of the single-layer second-order high-T-c SQUID gradiometer, IEEE APPL S, 11(1), 2001, pp. 1343-1346
Characterization of wet processed (Ni, Zn)-ferrites for CO2 decomposition
Authors:
Kim, JS Ahn, JR
Citation:
Js. Kim et Jr. Ahn, Characterization of wet processed (Ni, Zn)-ferrites for CO2 decomposition, J MATER SCI, 36(19), 2001, pp. 4813-4816
Physical properties of the Ba-adsorbed Si(111) surface at elevated temperatures
Authors:
Ahn, JR Kim, HW Lee, KD Chung, JW
Citation:
Jr. Ahn et al., Physical properties of the Ba-adsorbed Si(111) surface at elevated temperatures, APPL PHYS A, 71(4), 2000, pp. 461-464
Observation of disorder-induced 2D Mott-Hubbard states of the alkali-earthmetal (Mg,Ba)-adsorbed Si(111) surface
Authors:
Ahn, JR Lee, SS Kim, ND Min, JH Hwang, CG Chung, JW
Citation:
Jr. Ahn et al., Observation of disorder-induced 2D Mott-Hubbard states of the alkali-earthmetal (Mg,Ba)-adsorbed Si(111) surface, PHYS REV L, 84(8), 2000, pp. 1748-1751
Electronic excitations on the alkali-metal (Na,Cs)-adsorbed Si(111)7x7 surfaces
Authors:
Lee, KD Ahn, JR Chung, JW
Citation:
Kd. Lee et al., Electronic excitations on the alkali-metal (Na,Cs)-adsorbed Si(111)7x7 surfaces, APPL PHYS A, 68(1), 1999, pp. 115-118
Surface electronic structure of the single-domain Si(111)5 x 2-Au surface
Authors:
Kim, HW Shin, KS Ahn, JR Chung, JW
Citation:
Hw. Kim et al., Surface electronic structure of the single-domain Si(111)5 x 2-Au surface, J KOR PHYS, 35, 1999, pp. S534-S536
Alkali metal (Li, K) induced reconstructions of the W(001) surface
Authors:
Kim, HW Ahn, JR Chung, JW Yu, BD Scheffler, M
Citation:
Hw. Kim et al., Alkali metal (Li, K) induced reconstructions of the W(001) surface, SURF SCI, 430(1-3), 1999, pp. L515-L520
Ge-induced surface reconstructions on the 4 degrees vicinal Si(100) surface
Authors:
Ahn, JR Kim, CY Chung, JW
Citation:
Jr. Ahn et al., Ge-induced surface reconstructions on the 4 degrees vicinal Si(100) surface, SOL ST COMM, 113(2), 1999, pp. 83-87
Risultati:
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