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Citation: T. Aigo et al., Nitrogen incorporation mechanism and dependence of site-competition epitaxy on the total gas flow rate for 6H-SiC epitaxial layers grown by chemical vapor deposition, JPN J A P 1, 40(4A), 2001, pp. 2155-2158

Authors: Ohtani, N Katsuno, M Fujimoto, T Aigo, T Yashiro, H

Citation: N. Ohtani et al., Surface step model for micropipe formation in SiC, J CRYST GR, 226(2-3), 2001, pp. 254-260

Authors: Katsuno, M Ohtani, N Aigo, T Fujimoto, T Tsuge, H Yashiro, H Kanaya, M

Citation: M. Katsuno et al., Structural properties of subgrain boundaries in bulk SiC crystals, J CRYST GR, 216(1-4), 2000, pp. 256-262

Authors: Ohtani, N Katsuno, M Aigo, T Fujimoto, T Tsuge, H Yashiro, H Kanaya, M

Citation: N. Ohtani et al., Step bunching behaviour on the {0001} surface of hexagonal SiC, J CRYST GR, 210(4), 2000, pp. 613-622

Authors: Aigo, T Fujita, Y Tachikawa, A Ohta, Y

Citation: T. Aigo et al., Improvement of microwave performance for metal-semiconductor field effect transistors fabricated on a GaAs/Si substrate with a resistive layer at GaAs-Si interface, JPN J A P 1, 38(5A), 1999, pp. 2704-2706