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Results: 1-10 |
Results: 10
Adsorption and bonding of propene and 2-butenal on Pt(111)
Authors: Janin, E Ringler, S Weissenrieder, J Akermark, T Karlsson, UO Gothelid, M Nordlund, D Ogasawara, H
Citation: E. Janin et al., Adsorption and bonding of propene and 2-butenal on Pt(111), SURF SCI, 482, 2001, pp. 83-89
Investigation of the palladium catalyzed aromatic coupling of pyridine derivatives
Authors: Hagelin, H Hedman, B Orabona, I Akermark, T Akermark, B Klug, CA
Citation: H. Hagelin et al., Investigation of the palladium catalyzed aromatic coupling of pyridine derivatives, J MOL CAT A, 164(1-2), 2000, pp. 137-146
Molecular or atomic oxygen as the transported species in oxidation of silicon
Authors: Akermark, T
Citation: T. Akermark, Molecular or atomic oxygen as the transported species in oxidation of silicon, J ELCHEM SO, 147(5), 2000, pp. 1882-1887
Reactions in the system O-2-NO-N2O in a conventional furnace. II. Chemicalreactions between O-2 and NO (vol 146, pg 4586, 1999)
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-N2O in a conventional furnace. II. Chemicalreactions between O-2 and NO (vol 146, pg 4586, 1999), J ELCHEM SO, 147(1), 2000, pp. 394-394
Temperature and pressure dependence of the oxygen exchange at the SiO2-Si interface, O-2 <-> SiO2, during dry thermal oxidation of silicon
Authors: Akermark, T Ganem, JJ Trimaille, I Vickridge, I Rigo, S
Citation: T. Akermark et al., Temperature and pressure dependence of the oxygen exchange at the SiO2-Si interface, O-2 <-> SiO2, during dry thermal oxidation of silicon, J PHYS CH B, 103(45), 1999, pp. 9910-9914
Time dependence of the oxygen exchange O-2 <-> SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon
Authors: Akermark, T Gosset, LG Ganem, JJ Trimaille, I Vickridge, I Rigo, S
Citation: T. Akermark et al., Time dependence of the oxygen exchange O-2 <-> SiO2 at the SiO2-Si interface during dry thermal oxidation of silicon, J APPL PHYS, 86(2), 1999, pp. 1153-1155
Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations
Authors: Gosset, LG Ganem, JJ von Bardeleben, HJ Rigo, S Trimaille, I Cantin, JL Akermark, T Vickridge, IC
Citation: Lg. Gosset et al., Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations, J APPL PHYS, 85(7), 1999, pp. 3661-3665
Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon
Authors: Akermark, T Gosset, LG Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Loss of oxygen at the Si-SiO2 interface during dry oxidation of silicon, J ELCHEM SO, 146(9), 1999, pp. 3389-3392
Reactions in the system O-2-NO-SiO2 in a conventional furnace - I. Oxygen exchange reactions
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-SiO2 in a conventional furnace - I. Oxygen exchange reactions, J ELCHEM SO, 146(12), 1999, pp. 4580-4585
Reactions in the system O-2-NO-SiO2 in a conventional furnace - II. Chemical reactions between O-2 and NO
Authors: Akermark, T Ganem, JJ Trimaille, I Rigo, S
Citation: T. Akermark et al., Reactions in the system O-2-NO-SiO2 in a conventional furnace - II. Chemical reactions between O-2 and NO, J ELCHEM SO, 146(12), 1999, pp. 4586-4589
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