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Citation: Am. Narsale et al., Annealing effects on electrical characteristics of 100 MeV Si-28 implantation in GaAs, J MAT S-M E, 11(5), 2000, pp. 439-443

Authors: Damle, AR Narsale, AM Ali, YP Arora, BM Gokhale, MR Kanjilal, D Salvi, VP

Citation: Ar. Damle et al., Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) Si-28 ions, NUCL INST B, 168(2), 2000, pp. 229-236

Authors: Ali, YP Narsale, AM Arora, BM Gokhale, MR Kanjilal, D Salvi, VP

Citation: Yp. Ali et al., Electrical characteristics of high energy Sn-120 implantation in p-type GaAs, NUCL INST B, 156(1-4), 1999, pp. 78-83

Authors: Narsale, AM Ali, YP Arora, BM

Citation: Am. Narsale et al., Electrical behaviour of high energy Sn-120 implantation in n- and p-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 421-425