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Results: 1-25/43
Authors:
Alves, E
Monteiro, T
Soares, J
Santos, L
da Silva, MF
Soares, JC
Lojkowski, W
Kolesnikov, D
Vianden, R
Correia, JG
Citation: E. Alves et al., High temperature annealing of Er implanted GaN, MAT SCI E B, 81(1-3), 2001, pp. 132-135
Authors:
Pereira, S
Correia, MR
Pereira, E
O'Donnell, KP
Trager-Cowan, C
Sweeney, F
Alves, E
Sequeira, AD
Franco, N
Watson, IM
Citation: S. Pereira et al., Depth resolved studies of indium content and strain in InGaN layers, PHYS ST S-B, 228(1), 2001, pp. 59-64
Authors:
Correia, R
Pereira, S
Pereira, E
Alves, E
Gleize, J
Frandon, J
Renucci, MA
Citation: R. Correia et al., Indium distribution within InxGa1-xN epitaxial layers: A combined resonantRaman scattering and Rutherford backscattering study, PHYS ST S-B, 228(1), 2001, pp. 173-177
Authors:
Araujo, JP
Amaral, VS
Tavares, PB
Lencart-Silva, F
Lourenco, AACS
Alves, E
Sousa, JB
Vieira, JM
Citation: Jp. Araujo et al., Cadmium addition to vacancy doped lanthanum manganites: from metallic to insulator behaviour, J MAGN MAGN, 226, 2001, pp. 797-799
Authors:
Carvalho, S
Vaz, F
Rebouta, L
Schneider, D
Cavaleiro, A
Alves, E
Citation: S. Carvalho et al., Elastic properties of (Ti,Al,Si) N nanocomposite films, SURF COAT, 142, 2001, pp. 110-116
Authors:
Alves, LC
Alves, E
da Silva, MF
Soares, JC
Paul, A
La Barbera, A
Riccardi, B
Citation: Lc. Alves et al., Study of solid-state reactions of SiC/SiCf composites using microbeams, NUCL INST B, 181, 2001, pp. 377-381
Authors:
Liu, C
Wenzel, A
Rauschenbach, B
Alves, E
Sequeira, AD
Franco, N
da Silva, MF
Soares, JC
Fan, XJ
Citation: C. Liu et al., Amorphization of GaN by ion implantation, NUCL INST B, 178, 2001, pp. 200-203
Authors:
Alves, E
Sequeira, AD
Franco, N
da Silva, MF
Soares, JC
Sobolev, NA
Carmo, MC
Citation: E. Alves et al., Coherent amorphization of Ge/Si multilayers with ion beams, NUCL INST B, 178, 2001, pp. 279-282
Authors:
Barradas, NP
Vieira, A
Alves, E
Citation: Np. Barradas et al., Artificial neural network analysis of RBS data of Er-implanted sapphire, NUCL INST B, 175, 2001, pp. 108-112
Authors:
Alves, E
Liu, C
Waerenborgh, JC
da Silva, MF
Soares, JC
Citation: E. Alves et al., Study of Fe+ implanted GaN, NUCL INST B, 175, 2001, pp. 241-245
Authors:
Marques, C
Cruz, MM
da Silva, RC
Alves, E
Citation: C. Marques et al., Study of new surface structures created on sapphire by Co ion implantation, NUCL INST B, 175, 2001, pp. 500-504
Authors:
Pereira, S
Correia, MR
Pereira, E
O'Donnell, KP
Trager-Cowan, C
Sweeney, F
Alves, E
Citation: S. Pereira et al., Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study - art. no. 205311, PHYS REV B, 6420(20), 2001, pp. 5311
Authors:
Pereira, S
Correia, MR
Monteiro, T
Pereira, E
Soares, MR
Alves, E
Citation: S. Pereira et al., Indium content determination related with structural and optical properties of InGaN layers, J CRYST GR, 230(3-4), 2001, pp. 448-453
Authors:
Monteiro, T
Soares, J
Correia, MR
Alves, E
Citation: T. Monteiro et al., Green, red and infrared Er-related emission in implanted GaN : Er and GaN : Er,O samples, J APPL PHYS, 89(11), 2001, pp. 6183-6188
Authors:
Pereira, S
Correia, MR
Pereira, E
O'Donnell, KP
Alves, E
Sequeira, AD
Franco, N
Citation: S. Pereira et al., Interpretation of double x-ray diffraction peaks from InGaN layers, APPL PHYS L, 79(10), 2001, pp. 1432-1434
Authors:
Pereira, S
Correia, MR
Monteiro, T
Pereira, E
Alves, E
Sequeira, AD
Franco, N
Citation: S. Pereira et al., Compositional dependence of the strain-free optical band gap in InxGa1-xN layers, APPL PHYS L, 78(15), 2001, pp. 2137-2139
Authors:
Alves, E
Alves, LC
da Silva, MF
Melo, AA
Soares, JC
Scaffidi-Argentina, F
Citation: E. Alves et al., Influence of temperature and pressure on the beryllium pebbles bedelectrical resistivity, FUSION TECH, 38(3), 2000, pp. 320-325
Authors:
Amaral, VS
Lourenco, AACS
Araujo, JP
Tavares, PB
Alves, E
Sousa, JB
Vieira, JM
da Silva, MF
Soares, JC
Citation: Vs. Amaral et al., Anisotropic transport properties of epitaxial La2/3Ca1/3MnO3 thin films with different growth orientations (invited), J MAGN MAGN, 211(1-3), 2000, pp. 1-8
Authors:
Rebouta, L
Tavares, CJ
Aimo, R
Wang, Z
Pischow, K
Alves, E
Rojas, TC
Odriozola, JA
Citation: L. Rebouta et al., Hard nanocomposite Ti-Si-N coatings prepared by DC reactive magnetron sputtering, SURF COAT, 133, 2000, pp. 234-239
Authors:
Vaz, F
Rebouta, L
Goudeau, P
Pacaud, J
Garem, H
Riviere, JP
Cavaleiro, A
Alves, E
Citation: F. Vaz et al., Characterisation of Ti1-xSixNy nanocomposite films, SURF COAT, 133, 2000, pp. 307-313
Authors:
Alves, E
MacHargue, C
Silva, RC
Jesus, C
Conde, O
de Silva, MF
Soares, JC
Citation: E. Alves et al., Structural and magnetic studies of Fe-implanted alpha-Al2O3, SURF COAT, 128, 2000, pp. 434-439
Authors:
Alves, E
da Silva, MF
Soares, JC
Monteiro, T
Soares, J
Santos, L
Citation: E. Alves et al., Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire, NUCL INST B, 166, 2000, pp. 183-187
Influence of oxygen ion implantation on the damage and annealing kinetics of iron-implanted sapphire
Authors:
McHargue, CJ
Hunn, JD
Alves, E
da Silva, MF
Soares, JC
Citation: Cj. Mchargue et al., Influence of oxygen ion implantation on the damage and annealing kinetics of iron-implanted sapphire, NUCL INST B, 166, 2000, pp. 188-192
Authors:
Marques, C
Falcao, A
da Silva, RC
Alves, E
Citation: C. Marques et al., Annealing behaviour of natural topaz implanted with W and Cr ions, NUCL INST B, 166, 2000, pp. 204-208
Authors:
Behar, M
Grande, PL
Azevedo, GD
Alves, E
da Silva, MF
Soares, JC
Citation: M. Behar et al., Molecular H-2 and H-3 energy loss measurements along the Si < 111 > direction, NUCL INST B, 161, 2000, pp. 168-171