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Results: 1-10 |
Results: 10
Internal electric field formation in insulators under high-flux negative-ion implantation
Authors: Amekura, H Plaksin, OA Kishimoto, N
Citation: H. Amekura et al., Internal electric field formation in insulators under high-flux negative-ion implantation, JPN J A P 1, 40(2B), 2001, pp. 1091-1093
X-ray emission induced by 60 keV high-flux copper negative-ion implantation
Authors: Amekura, H Voitsenya, V Lay, TT Takeda, Y Kishimoto, N
Citation: H. Amekura et al., X-ray emission induced by 60 keV high-flux copper negative-ion implantation, JPN J A P 1, 40(2B), 2001, pp. 1094-1096
Microstructural changes in silicon thermal oxide induced by high-flux copper negative-ion implantation
Authors: Amekura, H Umeda, N Okubo, N Lee, CG Takeda, Y Kishimoto, N
Citation: H. Amekura et al., Microstructural changes in silicon thermal oxide induced by high-flux copper negative-ion implantation, NUCL INST B, 175, 2001, pp. 345-349
Surface smoothening and compaction of silica glass under dynamic negative ion mixing
Authors: Okubo, N Takeda, Y Amekura, H Zhao, JP Gritsyna, VT Kishimoto, N
Citation: N. Okubo et al., Surface smoothening and compaction of silica glass under dynamic negative ion mixing, NUCL INST B, 175, 2001, pp. 663-667
Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation
Authors: Kishimoto, N Amekura, H Plaksin, OA Stepanov, VA
Citation: N. Kishimoto et al., Radiation-induced conductivity of doped silicon in response to photon, proton and neutron irradiation, J NUCL MAT, 283, 2000, pp. 907-911
Persistent excited conductivity and the threshold fluence in a-Si : H under 17 MeV proton irradiation
Authors: Amekura, H Kishimoto, N Kono, K Kondo, A
Citation: H. Amekura et al., Persistent excited conductivity and the threshold fluence in a-Si : H under 17 MeV proton irradiation, J NON-CRYST, 266, 2000, pp. 444-449
In situ photodetection in strong radiation fields: Simultaneous irradiation of Si by photons and high-energy protons
Authors: Amekura, H Kishimoto, N Kono, K
Citation: H. Amekura et al., In situ photodetection in strong radiation fields: Simultaneous irradiation of Si by photons and high-energy protons, J APPL PHYS, 88(5), 2000, pp. 2497-2502
On the fluence dependence of radiation-induced carrier removal in moderately doped Si
Authors: Amekura, H Kono, K Kishimoto, N
Citation: H. Amekura et al., On the fluence dependence of radiation-induced carrier removal in moderately doped Si, PHYSICA B, 274, 1999, pp. 535-539
Luminescence from Er and Tb implanted into MOS tunnel diodes
Authors: Wang, S Amekura, H Eckau, A Carius, R Buchal, C
Citation: S. Wang et al., Luminescence from Er and Tb implanted into MOS tunnel diodes, NUCL INST B, 148(1-4), 1999, pp. 481-485
Particle-induced conductivity and photoconductivity of silicon under 17 MeV proton irradiation
Authors: Amekura, H Kishimoto, N Kono, K
Citation: H. Amekura et al., Particle-induced conductivity and photoconductivity of silicon under 17 MeV proton irradiation, J APPL PHYS, 84(9), 1998, pp. 4834-4841
Risultati: 1-10 |