AAAAAA

   
Results: 1-12 |
Results: 12
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots
Authors: Andreev, AD O'Reilly, EP
Citation: Ad. Andreev et Ep. O'Reilly, Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots, APPL PHYS L, 79(4), 2001, pp. 521-523
Theoretical performance and structure optimization of 3.5-4.5 mu m InGaSb/InGaAlSb multiple-quantum-well lasers
Authors: Andreev, AD O'Reilly, EP Adams, AR Ashley, T
Citation: Ad. Andreev et al., Theoretical performance and structure optimization of 3.5-4.5 mu m InGaSb/InGaAlSb multiple-quantum-well lasers, APPL PHYS L, 78(18), 2001, pp. 2640-2642
Theoretical study of the electronic structure of self-organized GaN/AlN QDs
Authors: Andreev, AD O'Reilly, EP
Citation: Ad. Andreev et Ep. O'Reilly, Theoretical study of the electronic structure of self-organized GaN/AlN QDs, NANOTECHNOL, 11(4), 2000, pp. 256-262
Theory of the electronic structure of GaN/AIN hexagonal quantum dots
Authors: Andreev, AD O'Reilly, EP
Citation: Ad. Andreev et Ep. O'Reilly, Theory of the electronic structure of GaN/AIN hexagonal quantum dots, PHYS REV B, 62(23), 2000, pp. 15851-15870
Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs
Authors: Andreev, AD O'Reilly, EP
Citation: Ad. Andreev et Ep. O'Reilly, Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs, THIN SOL FI, 364(1-2), 2000, pp. 291-295
Optical absorption in PbSe spherical quantum dots embedded in glass matrix
Authors: Andreev, AD Kolobkova, EV Lipovskii, AA
Citation: Ad. Andreev et al., Optical absorption in PbSe spherical quantum dots embedded in glass matrix, J APPL PHYS, 88(2), 2000, pp. 750-757
Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe
Authors: Andreev, AD Lipovskii, AA
Citation: Ad. Andreev et Aa. Lipovskii, Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe, SEMICONDUCT, 33(12), 1999, pp. 1304-1308
Absorption spectra of ZnSe/CdSe-based QDs
Authors: Andreev, AD Datsiev, RM Seisyan, RP
Citation: Ad. Andreev et al., Absorption spectra of ZnSe/CdSe-based QDs, PHYS ST S-B, 215(1), 1999, pp. 325-330
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots
Authors: Andreev, AD Lipovskii, AA
Citation: Ad. Andreev et Aa. Lipovskii, Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots, PHYS REV B, 59(23), 1999, pp. 15402-15404
Strain distributions in quantum dots of arbitrary shape
Authors: Andreev, AD Downes, JR Faux, DA O'Reilly, EP
Citation: Ad. Andreev et al., Strain distributions in quantum dots of arbitrary shape, J APPL PHYS, 86(1), 1999, pp. 297-305
Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers
Authors: Andreev, AD Donetsky, DV
Citation: Ad. Andreev et Dv. Donetsky, Analysis of temperature dependence of the threshold current in 2.3-2.6 mu m InGaAsSb/AlGaAsSb quantum-well lasers, APPL PHYS L, 74(19), 1999, pp. 2743-2745
The effect of the doping level of a MOSFET substrate on the size of the doping region
Authors: Andreev, AD Borzdov, VM Valiev, AA Zhevnyak, OG Komarov, FF
Citation: Ad. Andreev et al., The effect of the doping level of a MOSFET substrate on the size of the doping region, DAN BELARUS, 43(1), 1999, pp. 37-40
Risultati: 1-12 |