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Citation: Nd. Stoyanov et al., Photodiodes for a 1.5-4.8 mu m spectral range based on type-II GaSb/InGaAsSb heterostructures, SEMICONDUCT, 35(4), 2001, pp. 453-458

Authors: Andreev, IA Kunitsyna, EV Solov'ev, YV

Citation: Ia. Andreev et al., Use of lead as a neutral solvent for obtaining solid Ga1-xInxAsySb1-y solutions, TECH PHYS L, 25(10), 1999, pp. 792-793

Authors: Andreev, IA Kunitsyna, EV Mikhailova, MP Yakovlev, YP

Citation: Ia. Andreev et al., Long-wavelength photodiodes based on Ga1-xInxAsySb1-y with composition near the miscibility boundary, SEMICONDUCT, 33(2), 1999, pp. 216-220

Authors: Kunitsyna, EV Andreev, IA Charykov, NA Solov'ev, YV Yakovlev, YP

Citation: Ev. Kunitsyna et al., Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy, APPL SURF S, 142(1-4), 1999, pp. 371-374

Authors: L'vova, TV Andreev, IA Kunitsyna, EV Mikhailova, MP Ulin, VP Yakovlev, YP

Citation: Tv. L'Vova et al., Liquid-phase epitaxial growth of GaSb-related compounds on sulphide treated (100) GaSb substrates, IEE P-OPTO, 145(5), 1998, pp. 303-306