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Results: 1-9 |
Results: 9
Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells
Authors: Aperathitis, E Varonides, AC Scott, CG Sand, D Foukaraki, V Androulidaki, M Hatzopoulos, Z Panayotatos, P
Citation: E. Aperathitis et al., Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells, SOL EN MAT, 70(1), 2001, pp. 49-69
Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices
Authors: Aperathitis, E Cengher, D Kayambaki, M Androulidaki, M Deligeorgis, G Tsagaraki, K Hatzopoulous, Z Georgakilas, A
Citation: E. Aperathitis et al., Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices, MAT SCI E B, 80(1-3), 2001, pp. 77-80
Evaluation of performance capabilities of emitters and detectors based on a common MQW structure
Authors: Cengher, D Aperathitis, E Androulidaki, M Deligeorgis, G Kayambaki, M Hatzopoulos, Z Tzanetakis, P Georgakilas, A
Citation: D. Cengher et al., Evaluation of performance capabilities of emitters and detectors based on a common MQW structure, MAT SCI E B, 80(1-3), 2001, pp. 241-244
Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy
Authors: Amimer, K Georgakilas, A Androulidaki, M Tsagaraki, K Pavelescu, M Mikroulis, S Constantinidis, G Arbiol, J Peiro, F Cornet, A Calamiotou, M Kuzmik, J Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308
Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding
Authors: Hatzopoulos, Z Cengher, D Deligeorgis, G Androulidaki, M Aperathitis, E Halkias, G Georgakilas, A
Citation: Z. Hatzopoulos et al., Molecular beam epitaxy of GaAs/AlGaAs epitaxial structures for integrated optoelectronic devices on Si using GaAs-Si wafer bonding, J CRYST GR, 227, 2001, pp. 193-196
Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy
Authors: Amimer, K Georgakilas, A Tsagaraki, K Androulidaki, M Cengher, D Toth, L Pecz, B Calamiotou, M
Citation: K. Amimer et al., Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy, APPL PHYS L, 76(18), 2000, pp. 2580-2582
Photoreflectance as a non-destructive, room-temperature technique for routine testing of PM-HEMT structures
Authors: Androulidaki, M Lagadas, M Michelakis, K Panayotatos, P
Citation: M. Androulidaki et al., Photoreflectance as a non-destructive, room-temperature technique for routine testing of PM-HEMT structures, MAT SCI E B, 66(1-3), 1999, pp. 141-145
Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates
Authors: Michelakis, C Georgakilas, A Androulidaki, M Harteros, K Deligeorgis, G Calamiotou, M Peiro, F Becourt, N Cornet, A Halkias, G
Citation: C. Michelakis et al., Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates, MAT SCI E B, 66(1-3), 1999, pp. 181-184
Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates
Authors: Georgakilas, A Androulidaki, M Tsagraki, K Amimer, K Constantinidis, G Pelekanos, NT Calamiotou, M Czigany, Z Pecz, B
Citation: A. Georgakilas et al., Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates, PHYS ST S-A, 176(1), 1999, pp. 525-528
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