Authors:
Sadowski, J
Mathieu, R
Svedlindh, P
Karlsteen, M
Kanski, J
Ilver, L
Asklund, H
Swiatek, K
Domagala, JZ
Bak-Misiuk, J
Maude, D
Citation: J. Sadowski et al., Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures, PHYSICA E, 10(1-3), 2001, pp. 181-185
Authors:
Asklund, H
Ilver, L
Kanski, J
Mankefors, S
Sodervall, U
Sadowski, J
Citation: H. Asklund et al., Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314, PHYS REV B, 6319(19), 2001, pp. 5314
Authors:
Sadowski, J
Mathieu, R
Svedlindh, P
Domagala, JZ
Bak-Misiuk, J
Swiatek, K
Karlsteen, M
Kanski, J
Ilver, L
Asklund, H
Sodervall, U
Citation: J. Sadowski et al., Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates, APPL PHYS L, 78(21), 2001, pp. 3271-3273