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Authors: Sadowski, J Mathieu, R Svedlindh, P Karlsteen, M Kanski, J Ilver, L Asklund, H Swiatek, K Domagala, JZ Bak-Misiuk, J Maude, D
Citation: J. Sadowski et al., Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures, PHYSICA E, 10(1-3), 2001, pp. 181-185

Authors: Asklund, H Ilver, L Kanski, J Mankefors, S Sodervall, U Sadowski, J
Citation: H. Asklund et al., Thickness-dependent valence-band photoemission from thin InAs and GaAs films - art. no. 195314, PHYS REV B, 6319(19), 2001, pp. 5314

Authors: Sadowski, J Mathieu, R Svedlindh, P Domagala, JZ Bak-Misiuk, J Swiatek, K Karlsteen, M Kanski, J Ilver, L Asklund, H Sodervall, U
Citation: J. Sadowski et al., Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates, APPL PHYS L, 78(21), 2001, pp. 3271-3273
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