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Results: 1-25/31
Authors:
Li, SF
Opsal, J
Chu, HY
Aspnes, DE
Citation: Sf. Li et al., Detection and analysis of depolarization artifacts in rotating-compensatorpolarimeters, J OPT SOC A, 18(2), 2001, pp. 426-434
Authors:
Bang, CY
Lee, MS
Kim, TJ
Kim, YD
Aspnes, DE
Yu, YM
O, BS
Choi, YD
Citation: Cy. Bang et al., Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy, J KOR PHYS, 39(3), 2001, pp. 462-465
Authors:
Ebert, M
Aspnes, DE
Citation: M. Ebert et De. Aspnes, Investigation of noise in a spectrometer system using a short-arc source, REV SCI INS, 72(8), 2001, pp. 3477-3479
Authors:
Ebert, M
Bell, KA
Flock, K
Aspnes, DE
Citation: M. Ebert et al., Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy, PHYS ST S-A, 184(1), 2001, pp. 79-87
Authors:
Hyun, J
Aspnes, DE
Cuomo, JJ
Citation: J. Hyun et al., Nondestructive measurement of a glass transition temperature at spin-cast semicrystalline polymer surfaces, MACROMOLEC, 34(8), 2001, pp. 2395-2397
Authors:
Yoo, SD
Aspnes, DE
Citation: Sd. Yoo et De. Aspnes, Elimination of endpoint-discontinuity artifacts in the analysis of spectrain reciprocal space, J APPL PHYS, 89(12), 2001, pp. 8183-8192
Authors:
Lindquist, OPA
Jarrendahl, K
Peters, S
Zettler, JT
Cobet, C
Esser, N
Aspnes, DE
Henry, A
Edwards, NV
Citation: Opa. Lindquist et al., Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV, APPL PHYS L, 78(18), 2001, pp. 2715-2717
Authors:
Rossow, U
Mantese, L
Aspnes, DE
Citation: U. Rossow et al., Surface-induced optical anisotropy of Si and Ge, J VAC SCI B, 18(4), 2000, pp. 2229-2231
Authors:
Bell, KA
Ebert, M
Yoo, SD
Flock, K
Aspnes, DE
Citation: Ka. Bell et al., Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition, J VAC SCI A, 18(4), 2000, pp. 1184-1189
Authors:
Lee, H
Kim, IY
Powell, J
Aspnes, DE
Lee, S
Peiris, F
Furdyna, JK
Citation: H. Lee et al., Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys, J KOR PHYS, 37(6), 2000, pp. 1012-1016
Authors:
Yoo, SD
Aspnes, DE
Lastras-Martinez, LF
Ruf, T
Konuma, M
Cardona, M
Citation: Sd. Yoo et al., High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si, PHYS ST S-B, 220(1), 2000, pp. 117-125
Authors:
Aspnes, DE
Mantese, L
Bell, KA
Rossow, U
Citation: De. Aspnes et al., Coherence effects and time dependences of the optical response of surfacesand interfaces of optically absorbing materials, PHYS ST S-B, 220(1), 2000, pp. 709-715
Authors:
Bell, KA
Ebert, M
Yoo, SD
Flock, K
Aspnes, DE
Citation: Ka. Bell et al., Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor, J ELEC MAT, 29(1), 2000, pp. 106-111
Authors:
Lastras-Martinez, LF
Ruf, T
Konuma, M
Cardona, M
Aspnes, DE
Citation: Lf. Lastras-martinez et al., Isotopic effects on the dielectric response of Si around the E-1 gap, PHYS REV B, 61(19), 2000, pp. 12946-12951
Authors:
Ebert, M
Bell, KA
Yoo, SD
Flock, K
Aspnes, DE
Citation: M. Ebert et al., In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy, THIN SOL FI, 364(1-2), 2000, pp. 22-27
Authors:
Edwards, NV
Bremser, MD
Batchelor, AD
Buyanova, IA
Madsen, LD
Yoo, SD
Welhkamp, T
Wilmers, K
Cobet, C
Esser, N
Davis, RF
Aspnes, DE
Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
Authors:
Edwards, NV
Jarrendahl, K
Aspnes, DE
Robbie, K
Powell, GD
Cobet, C
Esser, N
Richter, W
Madsen, LD
Citation: Nv. Edwards et al., Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry, SURF SCI, 464(1), 2000, pp. L703-L707
Authors:
Rossow, U
Aspnes, DE
Citation: U. Rossow et De. Aspnes, Characterization of AlxGa1-xN-compound layers by reflectance difference spectroscopy, PHYS ST S-A, 177(1), 2000, pp. 157-163
Authors:
Hyun, J
Barletta, P
Koh, K
Yoo, S
Oh, J
Aspnes, DE
Cuomo, JJ
Citation: J. Hyun et al., Effect of Ar+ ion beam in the process of plasma surface modification of PET films, J APPL POLY, 77(8), 2000, pp. 1679-1683
Authors:
Lee, H
Kim, IY
Powell, J
Aspnes, DE
Lee, S
Peiris, F
Furdyna, JK
Citation: H. Lee et al., Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys, J APPL PHYS, 88(2), 2000, pp. 878-882
Authors:
Choi, SG
Kim, YD
Yoo, SD
Aspnes, DE
Woo, DH
Kim, SH
Citation: Sg. Choi et al., Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys, J APPL PHYS, 87(3), 2000, pp. 1287-1290
Authors:
Koo, MS
Kim, TJ
Lee, MS
Oh, MS
Kim, YD
Yoo, SD
Aspnes, DE
Jonker, BT
Citation: Ms. Koo et al., Dielectric function of epitaxial ZnSe films, APPL PHYS L, 77(21), 2000, pp. 3364-3366
Authors:
Mantese, L
Xue, QK
Sakurai, T
Aspnes, DE
Citation: L. Mantese et al., Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy, J VAC SCI A, 17(4), 1999, pp. 1652-1656
Authors:
Leng, JM
Opsal, J
Aspnes, DE
Citation: Jm. Leng et al., Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon, J VAC SCI A, 17(2), 1999, pp. 380-384
Authors:
Mantese, L
Bell, KA
Aspnes, DE
Rossow, U
Citation: L. Mantese et al., Photon-induced localization in optically absorbing materials, PHYS LETT A, 253(1-2), 1999, pp. 93-97