Authors:
Voldman, S
Hui, D
Warriner, L
Young, D
Howard, J
Assaderaghi, F
Shahidi, G
Citation: S. Voldman et al., Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips, J ELECTROST, 49(3-4), 2000, pp. 151-168
Authors:
Oldiges, P
Dennard, R
Heidel, D
Klaasen, B
Assaderaghi, F
Ieong, M
Citation: P. Oldiges et al., Theoretical determination of the temporal and spatial structure of alpha-particle induced electron-hole pair generation in silicon, IEEE NUCL S, 47(6), 2000, pp. 2575-2579