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Results:
1-7
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Results: 7
Authors:
Attenberger, W
Lindner, JKN
Schmid, M
Gerlach, JW
Stritzker, B
Citation: W. Attenberger et al., Composition analysis of oxidized buried SiC layers in silicon from EFTEM images, MAT SC S PR, 4(1-3), 2001, pp. 187-190
Authors:
Brunner, W
Attenberger, W
Hoffmann, H
Zweck, J
Citation: W. Brunner et al., Derivation of pair distribution functions for interface interdiffusion analysis for multilayered thin films using high-energy electron diffraction, J PHYS-COND, 13(13), 2001, pp. 2865-2873
Authors:
Attenberger, W
Thorwarth, G
Manova, D
Mandl, S
Stritzker, B
Rauschenbach, B
Citation: W. Attenberger et al., Interface properties of TiO2 on Si formed by simultaneous implantation anddeposition of titanium and oxygen ions, SURF COAT, 142, 2001, pp. 412-417
Authors:
Karl, H
Grosshans, I
Attenberger, W
Schmid, M
Stritzker, B
Citation: H. Karl et al., Buried ZnTe nanocrystallites in thermal SiO2 on silicon synthesized by high dose ion implantation, NUCL INST B, 178, 2001, pp. 126-130
Authors:
Scharmann, F
Maslarski, P
Attenberger, W
Lindner, JKN
Stritzker, B
Stauden, T
Pezoldt, J
Citation: F. Scharmann et al., Investigation of the nucleation and growth of SiC nanostructures on Si, THIN SOL FI, 380(1-2), 2000, pp. 92-96
Authors:
Scheiner, J
Goldhahn, R
Cimalla, V
Ecke, G
Attenberger, W
Lindner, JKM
Gobsch, G
Pezoldt, J
Citation: J. Scheiner et al., Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon, MAT SCI E B, 61-2, 1999, pp. 526-530
Authors:
Attenberger, W
Lindner, J
Cimalla, V
Pezoldt, J
Citation: W. Attenberger et al., Structural and morphological investigations of the initial stages in solidsource molecular beam epitaxy of SiC on (111)Si, MAT SCI E B, 61-2, 1999, pp. 544-548
Risultati:
1-7
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