Authors:
Aujol, E
Trassoudaine, A
Castelluci, D
Cadoret, R
Citation: E. Aujol et al., Influence of the partial pressure of GaCl3 in the growth process of GaN byHVPE under nitrogen, MAT SCI E B, 82(1-3), 2001, pp. 65-67
Authors:
Aujol, E
Trassoudaine, A
Siozade, L
Pimpinelli, A
Cadoret, R
Citation: E. Aujol et al., Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy, J CRYST GR, 230(3-4), 2001, pp. 372-376